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HM5117805TT-5 の電気的特性と機能

HM5117805TT-5のメーカーはElpida Memoryです、この部品の機能は「16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh」です。


製品の詳細 ( Datasheet PDF )

部品番号 HM5117805TT-5
部品説明 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
メーカ Elpida Memory
ロゴ Elpida Memory ロゴ 




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HM5117805TT-5 Datasheet, HM5117805TT-5 PDF,ピン配置, 機能
HM5117805 Series
16 M EDO DRAM (2-Mword × 8-bit)
2 k Refresh
E0156H10 (Ver. 1.0)
(Previous ADE-203-630D (Z))
Jun. 27, 2001
Description
The HM5117805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most
advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data
Out (EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 to
be packaged in standard 28-pin plastic SOJ and 28-pin TSOP.
Features
Single 5 V (±10%)
Access time: 50 ns/60 ns/70 ns (max)
Power dissipation
Active mode: 605 mW/550 mW/495 mW (max)
Standby mode : 11 mW (max)
: 0.83 mW (max) (L-version)
EDO page mode capability
Long refresh period
2048 refresh cycles : 32 ms
: 128 ms (L-version)
4 variations of refresh
RAS-only refresh
CAS-before-RAS refresh
Hidden refresh
Self refresh (L-version)
Battery backup operation (L-version)
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

1 Page





HM5117805TT-5 pdf, ピン配列
Pin Arrangement
HM5117805J/LJ Series
HM5117805S/LS Series
VCC
I/O0
I/O1
I/O2
I/O3
WE
RAS
NC
A10
A0
A1
A2
A3
VCC
1 28
2 27
3 26
4 25
5 24
6 23
7 22
8 21
9 20
10 19
11 18
12 17
13 16
14 15
(Top view)
VSS
I/O7
I/O6
I/O5
I/O4
CAS
OE
A9
A8
A7
A6
A5
A4
VSS
HM5117805 Series
HM5117805TT/LTT Series
HM5117805TS/LTS Series
VCC
I/O0
I/O1
I/O2
I/O3
WE
RAS
NC
A10
A0
A1
A2
A3
VCC
1 28
2 27
3 26
4 25
5 24
6 23
7 22
8 21
9 20
10 19
11 18
12 17
13 16
14 15
(Top view)
VSS
I/O7
I/O6
I/O5
I/O4
CAS
OE
A9
A8
A7
A6
A5
A4
VSS
Pin Description
Pin name
A0 to A10
I/O0 to I/O7
RAS
CAS
WE
OE
VCC
VSS
NC
Function
Address input
— Row/Refresh address A0 to A10
— Column address
A0 to A9
Data input/Data output
Row address strobe
Column address strobe
Read/Write enable
Output enable
Power supply
Ground
No connection
Data Sheet E0156H10
3


3Pages


HM5117805TT-5 電子部品, 半導体
HM5117805 Series
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V)
HM5117805
-5 -6 -7
Parameter
Symbol Min Max Min Max Min Max Unit Test conditions
Operating current*1, *2
Standby current
I CC1
— 110 — 100 — 90 mA
tRC = min
I CC2
— 2 — 2 — 2 mA
TTL interface
RAS, CAS = VIH
Dout = High-Z
— 1 — 1 — 1 mA
CMOS interface
RAS, CAS VCC – 0.2 V
Dout = High-Z
Standby current
(L-version)
I CC2
— 150 — 150 — 150 µA
CMOS interface
RAS, CAS VCC – 0.2 V
Dout = High-Z
RAS-only refresh current*2
Standby current*1
I CC3
I CC5
— 110 — 100 — 90 mA
— 5 — 5 — 5 mA
tRC = min
RAS = VIH
CAS = VIL
Dout = enable
CAS-before-RAS refresh
current
I CC6
— 110 — 100 — 90 mA
tRC = min
EDO page mode
current*1, *3
I CC7
— 100 — 90 — 85 mA
tHPC = min
Battery backup current*4
(Standby with CBR refresh)
(L-version)
I CC10
Self refresh mode current
(L-version)
I CC11
— 500 — 500 — 500 µA
— 300 — 300 — 300 µA
CMOS interface
Dout = High-Z
CBR refresh:
tRC = 62.5 µs
tRAS 0.3 µs
CMOS interface
RAS, CAS 0.2V
Dout = High-Z
Input leakage current
Output leakage current
I LI
I LO
–10 10 –10 10 –10 10 µA
–10 10 –10 10 –10 10 µA
0 V Vin 7 V
0 V Vout 7 V
Dout = disable
Output high voltage
VOH 2.4 VCC 2.4 VCC 2.4 VCC V
High Iout = –2 mA
Output low voltage
VOL 0 0.4 0 0.4 0 0.4 V Low Iout = 2 mA
Notes: 1. ICC depends on output load condition when the device is selected. ICC max is specified at the output
open condition.
2. Address can be changed once or less while RAS = VIL.
3. Address can be changed once or less while CAS = VIH.
4. CAS = L (0.2 V) while RAS = L (0.2 V).
Data Sheet E0156H10
6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
HM5117805TT-5

16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh

Elpida Memory
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