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Número de pieza | HM5117805LS-6 | |
Descripción | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | |
Fabricantes | Elpida Memory | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HM5117805LS-6 (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
No Preview Available ! HM5117805 Series
16 M EDO DRAM (2-Mword × 8-bit)
2 k Refresh
E0156H10 (Ver. 1.0)
(Previous ADE-203-630D (Z))
Jun. 27, 2001
Description
The HM5117805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most
advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data
Out (EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 to
be packaged in standard 28-pin plastic SOJ and 28-pin TSOP.
Features
• Single 5 V (±10%)
• Access time: 50 ns/60 ns/70 ns (max)
• Power dissipation
Active mode: 605 mW/550 mW/495 mW (max)
Standby mode : 11 mW (max)
: 0.83 mW (max) (L-version)
• EDO page mode capability
• Long refresh period
2048 refresh cycles : 32 ms
: 128 ms (L-version)
• 4 variations of refresh
RAS-only refresh
CAS-before-RAS refresh
Hidden refresh
Self refresh (L-version)
• Battery backup operation (L-version)
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
1 page Absolute Maximum Ratings
Parameter
Voltage on any pin relative to VSS
Supply voltage relative to VSS
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Symbol
VT
VCC
Iout
PT
Topr
Tstg
HM5117805 Series
Value
–1.0 to +7.0
–1.0 to +7.0
50
1.0
0 to +70
–55 to +125
Unit
V
V
mA
W
°C
°C
Recommended DC Operating Conditions (Ta = 0 to +70°C)
Parameter
Symbol
Supply voltage
VCC
Input high voltage
VIH
Input low voltage
VIL
Note: 1. All voltage referred to VSS.
Min
4.5
2.4
–1.0
Typ Max Unit Note
5.0 5.5 V
1
— 6.5 V
1
— 0.8 V
1
Data Sheet E0156H10
5
5 Page HM5117805 Series
EDO Page Mode Cycle
HM5117805
-5 -6 -7
Parameter
Symbol Min Max Min Max Min Max Unit
EDO page mode cycle time
t HPC
EDO page mode RAS pulse width tRASP
Access time from CAS precharge tCPA
RAS hold time from CAS precharge tCPRH
Output data hold time from CAS low tDOH
CAS hold time referred OE
t COL
CAS to OE setup time
t COP
Read command hold time from CAS tRCHC
precharge
20 —
25 —
30 —
ns
— 100000 — 100000 — 100000 ns
— 28
— 35
— 40
ns
28 —
35 —
40 —
ns
3—
3—
3—
ns
7—
10 —
13 —
ns
5—
5—
5—
ns
28 —
35 —
40 —
ns
Notes
19
16
9, 17
9, 17
EDO Page Mode Read-Modify-Write Cycle
HM5117805
-5 -6
Parameter
Symbol Min Max Min
EDO page mode read- modify-write tHPRWC 57 — 68
cycle time
WE delay time from CAS precharge tCPW
45 — 54
-7
Max Min
— 79
— 62
Max Unit
ns
ns
Notes
14
Refresh
Parameter
Refresh period
Refresh period (L-version)
Symbol
t REF
t REF
Max
32
128
Unit
ms
ms
Note
2048 cycles
2048 cycles
Data Sheet E0156H10
11
11 Page |
Páginas | Total 30 Páginas | |
PDF Descargar | [ Datasheet HM5117805LS-6.PDF ] |
Número de pieza | Descripción | Fabricantes |
HM5117805LS-5 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | Elpida Memory |
HM5117805LS-6 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | Elpida Memory |
HM5117805LS-7 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | Elpida Memory |
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