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HP4936DY の電気的特性と機能

HP4936DYのメーカーはIntersil Corporationです、この部品の機能は「5.8A/ 30V/ 0.037 Ohm/ Dual N-Channel/ Logic Level Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HP4936DY
部品説明 5.8A/ 30V/ 0.037 Ohm/ Dual N-Channel/ Logic Level Power MOSFET
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HP4936DY Datasheet, HP4936DY PDF,ピン配置, 機能
Data Sheet
HP4936DY
August 1999 File Number 4469.3
5.8A, 30V, 0.037 Ohm, Dual N-Channel,
Logic Level Power MOSFET
This power MOSFET is manufactured using an innovative
process. This advanced process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HP4936DY
SO-8
P4936DY
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HP4936DYT.
Features
• Logic Level Gate Drive
• 5.8A, 30V
• rDS(ON) = 0.037at ID = 5.8A, VGS = 10V
• rDS(ON) = 0.055at ID = 4.7A, VGS = 4.5V
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
S1(1)
G1(2)
D1(8)
D1(7)
S2(3)
G2(4)
D2(6)
D2(5)
Packaging
SO-8
8-8 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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HP4936DY pdf, ピン配列
HP4936DY
Typical Performance Curves Unless Otherwise Specified
30
VGS = 10, 9, 8, 7, 6, 5V
24 4V
18
12
6
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.8% MAX
3V
2, 1V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
4.0
FIGURE 1. OUTPUT CHARACTERISTICS
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.8% MAX
24 TA = -55oC
18
25oC
125oC
12
6
0
0123 45
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 2. TRANSFER CHARACTERISTICS
6
0.10
0.08
PULSE DURATION = 80µs
DUTY CYCLE = 0.8% MAX
0.06
0.04
VGS = 4.5V
0.02
VGS = 10V
0
0 6 12 18 24 30 36
ID, DRAIN CURRENT (A)
FIGURE 3. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
10
8
VDS = 15V
ID = 5.8A
6
4
2
0
0 4 8 12 16 20
Qg, GATE CHARGE (nC)
FIGURE 5. GATE TO SOURCE VOLTAGE vs GATE CHARGE
1250
1000
750
500
CISS
COSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGD
250 CRSS
0
0 6 12 18 24 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2.00
1.75
1.50
PULSE DURATION = 80µs
DUTY CYCLE = 0.8% MAX
VGS = 10V
ID = 5.8A
1.25
1.00
0.75
0.5
-50
-25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (oC)
150
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
8-10


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共有リンク

Link :


部品番号部品説明メーカ
HP4936DY

5.8A/ 30V/ 0.037 Ohm/ Dual N-Channel/ Logic Level Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
HP4936DY

5.8A/ 30V/ 0.037 Ohm/ Dual N-Channel/ Logic Level Power MOSFET

Intersil Corporation
Intersil Corporation


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