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HN29W25611T の電気的特性と機能

HN29W25611TのメーカーはHitachi Semiconductorです、この部品の機能は「256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)」です。


製品の詳細 ( Datasheet PDF )

部品番号 HN29W25611T
部品説明 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)
メーカ Hitachi Semiconductor
ロゴ Hitachi Semiconductor ロゴ 




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HN29W25611T Datasheet, HN29W25611T PDF,ピン配置, 機能
HN29W25611T-50H
256M AND type Flash Memory
More than 16,057-sector (271,299,072-bit)
ADE-203-1178A (Z)
Rev. 1.0
May. 10, 2000
Description
The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully
automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small
as (2048 + 64) bytes. Initial available sectors of HN29W25611T are more than 16,057 (98% of all sector
address) and less than 16,384 sectors.
Features
On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
Organization
AND Flash Memory: (2048 + 64) bytes × (More than 16,057 sectors)
Data register: (2048 + 64) bytes
Multi-level memory cell
2 bit/per memory cell
Automatic programming
Sector program time: 3.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
Automatic erase
Single sector erase time: 1.5 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function

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HN29W25611T pdf, ピン配列
Pin Arrangement
HN29W25611T-50H
VSS
VCC
OE
I/O0
I/O1
I/O2
I/O3
VSS
NC
NC
NC
NC
NC
NC
NC
NC
VCC
I/O4
I/O5
I/O6
I/O7
SC
VSS
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-pin TSOP
(Top view)
48 VSS
47 VSS
46 NC
45 CDE
44 NC
43 RES
42 NC
41 VCC
40 NC
39 NC
38 NC
37 NC
36 NC
35 NC
34 NC
33 NC
32 VSS
31 RDY/Busy
30 WE
29 NC
28 CE
27 NC
26 VCC
25 VSS
Pin Description
Pin name
Function
I/O0 to I/O7
Input/output
CE Chip enable
OE Output enable
WE Write enable
CDE
Command data enable
VCC*1
VSS * 1
RDY/Busy
Power supply
Ground
Ready/Busy
RES
Reset
SC Serial clock
NC No connection
Note: 1. All VCC and VSS pins should be connected to a common power supply and a ground, respectively.
3


3Pages


HN29W25611T 電子部品, 半導体
HN29W25611T-50H
Pin Function
CE: CE is used to select the device. The status returns to the standby at the rising edge of CE in the reading
operation. However, the status does not return to the standby at the rising edge of CE in the busy state in
programming and erase operation.
OE: Memory data and status register data can be read, when OE is VIL.
WE: Commands and address are latched at the rising edge of WE.
SC: Programming and reading data is latched at the rising edge of SC.
RES: RES pin must be kept at the VILR (VSS ± 0.2 V) level when VCC is turned on and off. In this way, data
in the memory is protected against unintentional erase and programming. RES must be kept at the VIHR (VCC
± 0.2 V) level during any operations such as programming, erase and read.
CDE: Commands and data are latched when CDE is VIL and address is latched when CDE is VIH.
RDY/Busy: The RDY/Busy indicates the program/erase status of the flash memory. The RDY/Busy signal
is initially at a high impedance state. It turns to a VOL level after the (40H) command in programming
operation or the (B0H) command in erase operation. After the erase or programming operation finishes, the
RDY/Busy signal turns back to the high impedance state.
I/O0 to I/O7: The I/O pins are used to input data, address and command, and are used to output memory data
and status register data.
Mode Selection
Mode
CE OE WE SC RES CDE RDY/Busy*3 I/O0 to I/O7
Deep standby
×*4 × × × VILR × VOH
High-Z
Standby
VIH × × × VIHR × VOH
High-Z
Output disable
VIL VIH VIH ×
VIHR ×
VOH
High-Z
Status register read*1
VIL VIL VIH ×
VIHR ×
VOH
Status register outputs
Command write*2
VIL VIH VIL VIL VIHR VIL VOH
Din
Notes: 1. Default mode after the power on is the status register read mode (refer to status transition). From
I/O0 to I/O7 pins output the status, when CE = VIL and OE = VIL (conventional read operation
condition).
2. Refer to the command definition. Data can be read, programmed and erased after commands are
written in this mode.
3. The RDY/Busy bus should be pulled up to VCC to maintain the VOH level while the RDY/Busy pin
outputs a high impedance.
4. An × means “Don’t care”. The pin level can be set to either VIL or VIH referred to DC characteristics.
6

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部品番号部品説明メーカ
HN29W25611

256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)

Hitachi Semiconductor
Hitachi Semiconductor
HN29W25611T

256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)

Hitachi Semiconductor
Hitachi Semiconductor
HN29W25611T-50

256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)

Hitachi Semiconductor
Hitachi Semiconductor
HN29W25611T-50H

256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)

Hitachi Semiconductor
Hitachi Semiconductor


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