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HN29V51211 の電気的特性と機能

HN29V51211のメーカーはHitachi Semiconductorです、この部品の機能は「512M AND type Flash Memory More than 32/113-sector (542/581/248-bit)」です。


製品の詳細 ( Datasheet PDF )

部品番号 HN29V51211
部品説明 512M AND type Flash Memory More than 32/113-sector (542/581/248-bit)
メーカ Hitachi Semiconductor
ロゴ Hitachi Semiconductor ロゴ 




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HN29V51211 Datasheet, HN29V51211 PDF,ピン配置, 機能
HN29V51211 Series
512M AND type Flash Memory
More than 32,113-sector (542,581,248-bit)
ADE-203-1221 (Z)
Preliminary
Rev. 0.0
Sep. 20, 2000
Description
The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has
fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29V51211 are more than 32,113 (98% of all
sector address) and less than 32,768 sectors.
Features
On-board single power supply (VCC): VCC = 2.7 V to 3.6 V
Organization
AND Flash Memory: (2048 + 64) bytes × (More than 32,113 sectors)
Data register: (2048 + 64) bytes
Multi-level memory cell
2 bit/per memory cell
Automatic programming
Sector program time: 1.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
Automatic erase
Single sector erase time: 1.0 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.

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HN29V51211 pdf, ピン配列
Pin Arrangement
HN29V51211 Series
VCC
NC*1
NC*1
NC*1
VSS
RES
RDY/Busy
SC
OE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
CED
WE
CE
NC*1
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-pin TSOP
(Top view)
48 NC
47 NC
46 NC
45 NC
44 NC
43 NC
42 NC
41 NC
40 NC
39 NC
38 NC
37 NC
36 NC
35 NC
34 NC
33 NC
32 NC
31 NC
30 NC
29 NC
28 NC
27 NC
26 NC
25 NC
Note: 1. This pin can be used as the VSS pin.
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HN29V51211 電子部品, 半導体
HN29V51211 Series
Memory Map and Address
Sector address
7FFFH
7FFEH
7FFDH
2048 bytes
2048 bytes
2048 bytes
64 bytes
64 bytes
64 bytes
0002H
0001H
0000H
000H
2048 bytes
2048 bytes
2048 bytes
64 bytes
64 bytes
64 bytes
800H
83FH Column address
2048 + 64 bytes
Control bytes
Address
Cycles
I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7
Sector address SA (1): First cycle A0 A1 A2 A3 A4 A5 A6 A7
SA (2): Second cycle A8 A9 A10 A11 A12 A13 A14 ×*2
Column address CA (1): First cycle A0 A1 A2 A3 A4 A5 A6 A7
CA (2): Second cycle A8 A9 A10 A11 × × × ×
Notes: 1. Some failed sectors may exist in the device. The failed sectors can be recognized
by reading the sector valid data written in a part of the column address 800 to 83F
(The specific address is TBD.). The sector valid data must be read and kept outside
of the sector before the sector erase. When the sector is programmed, the sector
valid data should be written back to the sector.
2. An × means "Don't care". The pin level can be set to either VIL or VIH, referred
to DC characteristics.
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6 Page



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共有リンク

Link :


部品番号部品説明メーカ
HN29V51211

512M AND type Flash Memory More than 32/113-sector (542/581/248-bit)

Hitachi Semiconductor
Hitachi Semiconductor
HN29V51211T-50

512M AND type Flash Memory More than 32/113-sector (542/581/248-bit)

Hitachi Semiconductor
Hitachi Semiconductor


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