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PDF HMC442 Data sheet ( Hoja de datos )

Número de pieza HMC442
Descripción GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER/ 17.5 - 25.5 GHz
Fabricantes Hittite Microwave Corporation 
Logotipo Hittite Microwave Corporation Logotipo



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MICROWAVE CORPORATION
v01.0304
HMC442
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
1 Typical Applications
Features
The HMC442 is ideal for use as a medium power
Saturated Power: +23 dBm @ 25% PAE
amplifier for:
Gain: 15 dB
• Point-to-Point Radios
Supply Voltage: +5.0 V
• Point-to-Multi-Point Radios
50 Ohm Matched Input/Output
• VSAT
Functional Diagram
General Description
The HMC442 is an efficient GaAs PHEMT MMIC
Medium Power Amplifier which operates between
17.5 and 25.5 GHz. The HMC442 provides 15 dB
of gain, +23 dBm of saturated power and 25%
PAE from a +5.0 V supply voltage. The amplifier
chip can easily be integrated into Multi-Chip-
Modules (MCMs) due to its small (0.96mm2) size.
All data is tested with the chip in a 50 Ohm test
fixture connected via 0.025mm (1 mil) diameter
wire bonds of minimal length 0.31mm (12 mils).
1 - 68
Electrical Specifications, TA = +25° C, Vdd = 5V, Idd = 85 mA*
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range
17.5 - 21.0
21.0 - 24.0
24.0 - 25.5
GHz
Gain
12 14.5
12 15
13.5
16
dB
Gain Variation Over Temperature
0.02 0.03
0.02 0.03
0.02 0.03 dB/ °C
Input Return Loss
15 13 10 dB
Output Return Loss
10 10 10 dB
Output Power for 1 dB Compression (P1dB)
18 21
18.5
21.5
19 22
dBm
Saturated Output Power (Psat)
20 23
20 23
20 23.5
dBm
Output Third Order Intercept (IP3)
29 28 27 dBm
Noise Figure
6.5 5.5
6 dB
Supply Current (Idd)(Vdd = 5V, Vgg = -1V Typ.)
85
85
85 mA
* Adjust Vgg between -1.5 to -0.5V to achieve Idd = 85 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com

1 page




HMC442 pdf
MICROWAVE CORPORATION
v01.0304
HMC442
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
1 Pad Descriptions
Pin Number
Function
Description
Interface Schematic
Gate control for amplifier. Adjust to achieve Id of 85 mA.
1 Vgg Please follow “MMIC Amplifier Biasing Procedure” Applica-
tion Note.
2
RF IN
This pad is AC coupled and matched to 50 Ohms from
17.5 - 25.5 GHz.
Power Supply Voltage for the amplifier. External bypass
3 Vdd
capacitors of 100 pF and 0.01 µF are required.
4
RF OUT
This pad is AC coupled and matched to 50 Ohms from
17.5 - 25.5 GHz.
1 - 72
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com

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