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PDF HSME-T700 Data sheet ( Hoja de datos )

Número de pieza HSME-T700
Descripción Surface Mount LED Indicator
Fabricantes Agilent(Hewlett-Packard) 
Logotipo Agilent(Hewlett-Packard) Logotipo



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No Preview Available ! HSME-T700 Hoja de datos, Descripción, Manual

H
Surface Mount LED Indicator
Technical Data
HSMD-TX00
HSME-TX00
HSMG-TX00
HSMH-TX00
HSMS-TX00
HSMY-TX00
Features
• Compatible with Automatic
Placement Equipment
• Compatible with Infrared
and Vapor Phase Reflow
Solder Processes
• Packaged in 12 mm or 8 mm
tape on 7" or 13" Diameter
Reels
• EIA Standard Package
• Low Package Profile
• Nondiffused Package
Excellent for Backlighting
and Coupling to Light Pipes
Description
These solid state surface mount
indicators are designed with a flat
top and sides to be easily handled
by automatic placement
equipment. A glue pad is provided
for adhesive mounting processes.
They are compatible with
convective IR and vapor phase
reflow soldering and conductive
epoxy attachment processes.
The package size and configura-
tion conform to the EIA-535
BAAC standard specification for
case size 3528 tantalum
capacitors. The folded leads
permit dense placement and
provide an external solder joint
for ease of inspection.
These devices are nondiffused,
providing high intensity for
applications such as backlighting,
light pipe illumination, and front
panel indication.
Device Selection Guide
DH AS
AlGaAs
Red
HSMH-
T400
T500
T600
T700
High
Efficiency
Red
HSMS-
T400
Orange
HSMD-
T400
T500
T500
T600
T600
T700
T700
Yellow
HSMY-
T400
T500
T600
T700
High
Performance
Green
HSMG-
T400
T500
T600
T700
Emerald
Green
HSME-
T400
T500
T600
T700
Description
12 mm Tape, 7" Reel,
2000 Devices
12 mm Tape, 13" Reel,
8000 Devices
8 mm Tape, 7" Reel,
2000 Devices
8 mm Tape, 13" Reel,
8000 Devices
1-204
5964-9359E

1 page




HSME-T700 pdf
Orange HSMD-TX00
Parameter
Luminous Intensity
Forward Voltage
Reverse Breakdown Voltage
Included Angle Between
Half Intensity Points[1]
Peak Wavelength
Dominant Wavelength[2]
Spectral Line Half Width
Speed of Response
Capacitance
Thermal Resistance
Luminous Efficacy[3]
Symbol
Iv
VF
VR
Min.
1.5
5.0
2θ1/2
λPEAK
λd
∆λ1/2
τs
C
RθJ-pin
ηv
Typ.
5.0
1.9
30.0
Max.
2.5
Units
mcd
V
V
120 deg.
600 nm
602 nm
40 nm
260 ns
4 pF
160 °C/W
380 lm/W
Test Conditions
IF = 10 mA
IF = 10 mA
IR = 100 µA
Time Constant, e-t/τs
VF = 0, f = 1 MHz
Junction-to-Cathode
Yellow HSMY-TX00
Parameter
Luminous Intensity
Forward Voltage
Reverse Breakdown Voltage
Included Angle Between
Half Intensity Points[1]
Peak Wavelength
Dominant Wavelength[2]
Spectral Line Half Width
Speed of Response
Capacitance
Thermal Resistance
Luminous Efficacy[3]
Symbol
Iv
VF
VR
Min.
2.0
5.0
2θ1/2
λPEAK
λd
∆λ1/2
τs
C
RθJ-pin
ηv
Typ.
5.0
2.0
50.0
Max.
2.5
Units
mcd
V
V
120 deg.
583 nm
585 nm
36 nm
90 ns
15 pF
160 °C/W
500 lm/W
Test Conditions
IF = 10 mA
IF = 10 mA
IR = 100 µA
Time Constant, e-t/τs
VF = 0, f = 1 MHz
Junction-to-Cathode
Notes:
1. θ1/2 is the off-axis angle where the luminous intensity is half the on-axis value.
2. The dominant wavelength, λd, is derived from the CIE Chromaticity Diagram and represents the color of the device.
3. The radiant intensity, Ie, in watts per steradian, may be found from the equation Ie = Iv/ ηv, where Iv is the luminous intensity in
candelas and ηv is luminous efficacy in lumens/watt.
1-208

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