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PDF HS-2600RH Data sheet ( Hoja de datos )
| Número de pieza | HS-2600RH | |
| Descripción | Radiation Hardened Wideband/ High Impedance Operational Amplifier | |
| Fabricantes | Intersil Corporation | |
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Data Sheet
HS-2600RH
August 1999 File Number 3650.1
Radiation Hardened Wideband, High
Impedance Operational Amplifier
HS-2600RH is a radiation hardened internally compensated
bipolar operational amplifier that features very high input
impedance coupled with wideband AC performance. The
high resistance of the input stage is complemented by low
offset voltage (4mVmax at 25oC for HS-2600RH) and low
bias and offset current (10nA max at 25oC for HS-2600RH)
to facilitate accurate signal processing. Offset voltage can be
reduced further by means of an external nulling
potentiometer. The 4V/µs minimum slew rate at 25oC and
the minimum open loop gain of 100kV/V at 25oC enables the
HS-2600RH to perform high gain amplification of fast,
wideband signals. These dynamic characteristics, coupled
with fast settling times, make these amplifiers ideally suited
to pulse amplification designs as well as high frequency or
video applications. The frequency response of the amplifier
can be tailored to exact design requirements by means of an
external bandwidth control capacitor. Other high
performance designs such as high gain, low distortion audio
amplifiers, high-Q and wideband active filters and high
speed comparators, are excellent uses of this part.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95671. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
5962D9567101VPA
HS7-2600RH-Q
5962D9567101VPC
HS7B-2600RH-Q
TEMP. RANGE
(oC)
-55 to 125
-55 to 125
Features
• Electrically Screened to SMD # 5962-95671
• QML Qualified per MIL-PRF-38535 Requirements
• High Input Impedance . . . . . . . . . . . . . . . . . 100MΩ (Min)
500MΩ (Typ)
• High Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . 3V/µs (Min)
7V/µs (Typ)
• Low Input Bias Current . . . . . . . . . . . . . . . . . . 10nA (Max)
1nA (Typ)
• Low Input Offset Current (HS-2600RH) . . . . . . 4mV (Max)
• Wide Unity Gain Bandwidth . . . . . . . . . . . . . .12MHz (Typ)
• Output Short Circuit Protection
• Total Gamma Dose. . . . . . . . . . . . . . . . . . . . . 10kRAD(Si)
Applications
• Video Amplifier
• Pulse Amplifier
• High-Q Active Filters
• High Speed Comparators
• Low Distortion Oscillators
Pinout
HS7-2600RH (CERDIP) GDIP1-T8
OR
HS7B-2600RH (SBDIP) CDIP2-T8
TOP VIEW
BAL 1
-IN 2
+IN 3
V- 4
–
+
8 COMP
7 V+
6 OUT
5 BAL
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1 page  
HS-2600RH
Die Characteristics
DIE DIMENSIONS:
69 mils x 56 mils x 19 mils ±1 mils
1750µm x 1420µm x 483µm ±25.4µm
INTERFACE MATERIALS:
Glassivation:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
Top Metallization:
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
Substrate:
Linear Bipolar DI
Backside Finish:
Silicon
Metallization Mask Layout
+IN -IN
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
Unbiased
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2 x 105A/cm2
Transistor Count:
140
HS-2600RH
BAL
V-
COMP
BAL
V+
OUT
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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