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PDF HS-1100RH Data sheet ( Hoja de datos )

Número de pieza HS-1100RH
Descripción Radiation Hardened/ Ultra High Speed Current Feedback Amplifier
Fabricantes Intersil Corporation 
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No Preview Available ! HS-1100RH Hoja de datos, Descripción, Manual

Data Sheet
HS-1100RH
August 1999 File Number 4100.2
Radiation Hardened, Ultra High Speed
Current Feedback Amplifier
The HS-1100RH is a radiation hardened high speed,
wideband, fast settling current feedback amplifier. Built with
Intersil’s proprietary, complementary bipolar UHF-1 (DI
bonded wafer) process, it is the fastest monolithic amplifier
available from any semiconductor manufacturer. These
devices are QML approved and are processed and screened
in full compliance with MIL-PRF-38535.
The HS-1100RH’s wide bandwidth, fast settling characteristic,
and low output impedance make this amplifier ideal for driving
fast A/D converters.
Component and composite video systems will also benefit
from this amplifier’s performance, as indicated by the
excellent gain flatness, and 0.03%/0.05 Deg. Differential
Gain/Phase specifications (RL = 75).
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-94676. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/space.htm
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
5962F9467602VPA
HS7-1100RH-Q
5962F9467602VPC
HS7B-1100RH-Q
HFA1100IJ (Sample) HFA1100IJ
HFA11XXEVAL
Evaluation Board
TEMP. RANGE
(oC)
-55 to 125
-55 to 125
-40 to 85
Features
• Electrically Screened to SMD # 5962-94676
• QML Qualified per MIL-PRF-38535 Requirements
• Low Distortion (HD3, 30MHz). . . . . . . . . . . . -84dBc (Typ)
• Wide -3dB Bandwidth. . . . . . . . . . . . . . . . . 850MHz (Typ)
• Very High Slew Rate . . . . . . . . . . . . . . . . 2300V/µs (Typ)
• Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . . 11ns (Typ)
• Excellent Gain Flatness (to 50MHz). . . . . . . 0.05dB (Typ)
• High Output Current . . . . . . . . . . . . . . . . . . . 65mA (Typ)
• Fast Overdrive Recovery . . . . . . . . . . . . . . . . <10ns (Typ)
• Total Gamma Dose. . . . . . . . . . . . . . . . . . . . 300kRAD(Si)
• Latch Up . . . . . . . . . . . . . . . . . . . . . None (DI Technology)
Applications
• Video Switching and Routing
• Pulse and Video Amplifiers
• Wideband Amplifiers
• RF/IF Signal Processing
• Flash A/D Driver
• Imaging Systems
Pinout
HS-1100RH
GDIP1-T8 (CERDIP)
OR CDIP2-T8 (SBDIP)
TOP VIEW
NC 1
-IN 2
+IN 3
V- 4
-
+
8 NC
7 V+
6 OUT
5 NC
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

1 page




HS-1100RH pdf
HS-1100RH
Typical Performance Curves VSUPPLY = ±5V, RF = 510, RL = 100, TA = 25oC, Unless Otherwise Specified
120
90
60
30
0
-30
-60
-90
-120
5ns/DIV.
FIGURE 3. SMALL SIGNAL PULSE RESPONSE (AV = +2)
1.2
0.9
0.6
0.3
0
-0.3
-0.6
-0.9
-1.2
5ns/DIV.
FIGURE 4. LARGE SIGNAL PULSE RESPONSE (AV = +2)
GAIN
0
-3
-6
-9
-12
PHASE
AV = +1
AV = +2
AV = +6
AV = +11
0.3 1
AV = +1
AV = +2
AV = +6
AV = +11
10 100
FREQUENCY (MHz)
0
-90
-180
-270
-360
1K
FIGURE 5. NON-INVERTING FREQUENCY RESPONSE
(VOUT = 200mVP-P)
0
-3
-6
-9
-12
0.3 1
GAIN
AV = -1
AV = -5
AV = -10
AV = -20
PHASE
AV = -1
AV = -5
AV = -10
AV = -20
10 100
FREQUENCY (MHz)
180
90
0
-90
-180
1K
FIGURE 6. INVERTING FREQUENCY RESPONSE
(VOUT = 200mVP-P)
+6
+3 RL = 1k
0 GAIN
-3
RL = 100
RL = 50
-6 RL = 50
PHASE
RL = 100
0.3 1
RL = 1k
RL = 100
RL = 1k
10 100
FREQUENCY (MHz)
0
-90
-180
-270
-360
1K
FIGURE 7. FREQUENCY RESPONSE FOR VARIOUS LOAD
RESISTORS (AV = +1, VOUT = 200mVP-P)
5
+3
0
-3
-6
0.3
GAIN
RL = 1k
PHASE
RL = 50
RL = 100
RL = 100
RL = 50
RL = 1k
RL = 100
RL = 1k
1 10 100
FREQUENCY (MHz)
0
-90
-180
-270
-360
1K
FIGURE 8. FREQUENCY RESPONSE FOR VARIOUS LOAD
RESISTORS (AV = +2, VOUT = 200mVP-P)

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HS-1100RH arduino
Die Characteristics
DIE DIMENSIONS:
63 mils x 44 mils x 19 mils ±1 mil
(1600µm x 1130µm x 483µm ±25.4µm)
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
Top Metallization:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AICu (2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
Metallization Mask Layout
V-
HS-1100RH
Substrate:
UHF-1, Bonded Wafer, DI
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
Floating
ADDITIONAL INFORMATION:
Worst Case Current Density:
1.6 x 105 A/cm2
Transistor Count:
52
HS-1100RH
+IN
-IN
VL
BAL
OUT
BAL
VH
V+
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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