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Datasheet HRFC-AT11K-A04 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HRFC-AT11K-A04 | FC Type Fixed Attenuators FC Type Fixed Attenuators
MU SC FC Harsh Environment
sFeatures
1. Excellent operational gualities 2. Maxmum input power : 250mW
Attenuators
3. Please contact us if you have any requests. Hirose will offer excellent solutions to meet your reguirements Important Notice
Plug key width : 2.1mm Adapte |  Hirose Electric | data |
HRF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HRF120N10K | N-Channel MOSFET HRF120N10K
HRF120N10K
100V N-Channel Trench MOSFET
FEATURES
BVDSS = 100 V ID = 73 A Unrivalled Gate Charge : 65 nC (Typ.) Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V 100% Avalanche Tested
December 2014
8DFN 5x6
1
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
 SemiHow mosfet | | |
| 2 | HRF130N06K | N-Channel MOSFET HRF130N06K
HRF130N06K
60V N-Channel Trench MOSFET
FEATURES
BVDSS = 60 V ID = 70 A Unrivalled Gate Charge : 42 nC (Typ.) Lower RDS(ON) : 10.5 mΩ (Typ.) @VGS=10V 100% Avalanche Tested
December 2014
8DFN 5x6 1
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
SemiHow mosfet | | |
| 3 | HRF140N06K | N-Channel MOSFET HRF140N06K
HRF140N06K
60V N-Channel Trench MOSFET
FEATURES
BVDSS = 60 V ID = 40 A Unrivalled Gate Charge : 40 nC (Typ.) Lower RDS(ON) : 11.5 mΩ (Typ.) @VGS=10V 100% Avalanche Tested
December 2014
8DFN 5x6 1
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
SemiHow mosfet | | |
| 4 | HRF22 | Silicon Schottky Barrier Diode for Rectifying HRF22
Silicon Schottky Barrier Diode for Rectifying
ADE-208-163D(Z) Rev 4 Jul. 1997 Features
• • Good for high-frequency rectify. LRP structure ensures higher reliability.
Ordering Information
Type No. HRF22 Laser Mark 22 Package Code LRP
Outline
Cathode mark Mark
1
22
2 1. Cathode 2. Ano  Hitachi Semiconductor diode | | |
| 5 | HRF302A | Silicon Schottky Barrier Diode
HRF302A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-244C(Z) Rev 3 Features
• Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HRF302 Hitachi Semiconductor diode | | |
| 6 | HRF32 | Silicon Schottky Barrier Diode for Rectifying HRF32
Silicon Schottky Barrier Diode for Rectifying
ADE-208-164D(Z) Rev 4 Jul. 1997 Features
• • Good for high-frequency rectify. LRP structure ensures higher reliability.
Ordering Information
Type No. HRF32 Laser Mark 32 Package Code LRP
Outline
Cathode mark Mark
1
32
2 1. Cathode 2. Ano Hitachi Semiconductor diode | | |
| 7 | HRF3205 | 100A/ 55V/ 0.008 Ohm/ N-Channel/ Power MOSFETs HRF3205, HRF3205S
Data Sheet December 2001
100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown aval  Fairchild Semiconductor mosfet | |
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