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HUFA76633S3S の電気的特性と機能

HUFA76633S3SのメーカーはFairchild Semiconductorです、この部品の機能は「38A/ 100V/ 0.036 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HUFA76633S3S
部品説明 38A/ 100V/ 0.036 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HUFA76633S3S Datasheet, HUFA76633S3S PDF,ピン配置, 機能
Data Sheet
HUFA76633P3, HUFA76633S3S
January 2002
38A, 100V, 0.036 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
HUFA76633P3
GATE
SOURCE
DRAIN
(FLANGE)
HUFA76633S3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.035Ω, VGS = 10V
- rDS(ON) = 0.036Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA76633P3
TO-220AB
76633P
HUFA76633S3S
TO-263AB
76633S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76633S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUFA76633P3, HUFA76633S3S
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (TC= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous
Continuous
Continuous
(TC=
(TC=
(TC=
11200500oCooCC, V,, VVGGGSSS===1540V.V5))V()F. (i.gF.uig.rue. r.e2.)2. )..
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ID
ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
100
100
±16
38
39
27
27
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 150oC.
145
0.97
-55 to 175
300
260
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation
HUFA76633P3, HUFA76633S3S Rev. B

1 Page





HUFA76633S3S pdf, ピン配列
HUFA76633P3, HUFA76633S3S
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
50
40
VGS = 10V
30
VGS = 4.5V
20
10
0
25
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
10-5
SINGLE PULSE
10-4
PDM
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
100
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
101
500
VGS = 10V
100
VGS = 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
30
10-5
10-4
©2002 Fairchild Semiconductor Corporation
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
10-3
10-2
t, PULSE WIDTH (s)
10-1
FIGURE 4. PEAK CURRENT CAPABILITY
100 101
HUFA76633P3, HUFA76633S3S Rev. B


3Pages


HUFA76633S3S 電子部品, 半導体
HUFA76633P3, HUFA76633S3S
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 19. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 1V
0 Qg(TH)
Qgs
Ig(REF)
0
Qg(5)
Qgd
VGS = 5V
VGS = 10V
FIGURE 20. GATE CHARGE WAVEFORMS
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
FIGURE 21. SWITCHING TIME TEST CIRCUIT
©2002 Fairchild Semiconductor Corporation
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 22. SWITCHING TIME WAVEFORM
HUFA76633P3, HUFA76633S3S Rev. B

6 Page



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部品番号部品説明メーカ
HUFA76633S3S

38A/ 100V/ 0.036 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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