DataSheet.jp

HUFA75545S3S の電気的特性と機能

HUFA75545S3SのメーカーはFairchild Semiconductorです、この部品の機能は「75A/ 80V/ 0.010 Ohm/ N-Channel/ UltraFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HUFA75545S3S
部品説明 75A/ 80V/ 0.010 Ohm/ N-Channel/ UltraFET Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HUFA75545S3S Datasheet, HUFA75545S3S PDF,ピン配置, 機能
Data Sheet
HUFA75545P3, HUFA75545S3S
December 2001
75A, 80V, 0.010 Ohm, N-Channel,
UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUFA75545P3
GATE
SOURCE
HUFA75545S3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.010Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchild.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75545P3
TO-220AB
75545P
HUFA75545S3S
TO-263AB
75545S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75545S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUFA75545P3, HUFA75545S3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
(TC
(TC
=
=
12050oCoC, V, VGGSS==1100VV) )(F(Figiguurere22) )
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ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
80
80
±20
75
73
Figure 4
Figure 6
V
V
V
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 150oC.
270
1.8
-55 to 175
300
260
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75545P3, HUFA75545S3S Rev. B

1 Page





HUFA75545S3S pdf, ピン配列
HUFA75545P3, HUFA75545S3S
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
80
60
VGS = 10V
40
20
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
10-5
SINGLE PULSE
10-4
PDM
10-3
10-2
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-1
100
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
101
2000
1000
VGS = 10V
100 TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
50
10-5
10-4
©2001 Fairchild Semiconductor Corporation
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
10-3
10-2
10-1
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
100 101
HUFA75545P3, HUFA75545S3S Rev. B


3Pages


HUFA75545S3S 電子部品, 半導体
HUFA75545P3, HUFA75545S3S
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 16. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 2V
0 Qg(TH)
Qgs
Ig(REF)
0
Qg(10)
Qgd
VGS = 10V
VGS = 20V
FIGURE 17. GATE CHARGE WAVEFORMS
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
FIGURE 18. SWITCHING TIME TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 19. SWITCHING TIME WAVEFORM
©2001 Fairchild Semiconductor Corporation
HUFA75545P3, HUFA75545S3S Rev. B

6 Page



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部品番号部品説明メーカ
HUFA75545S3S

75A/ 80V/ 0.010 Ohm/ N-Channel/ UltraFET Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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