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PDF HUFA75329G3 Data sheet ( Hoja de datos )
| Número de pieza | HUFA75329G3 | |
| Descripción | 49A/ 55V/ 0.024 Ohm/ N-Channel UltraFET Power MOSFETs | |
| Fabricantes | Fairchild Semiconductor | |
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HUFA75329G3, HUFA75329P3, HUFA75329S3S
Data Sheet
June 2002
49A, 55V, 0.024 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75329G3
TO-247
75329G
HUFA75329P3
TO-220AB
75329P
HUFA75329S3S
TO-263AB
75329S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75329S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 49A, 55V
• Ultra Low On-Resistance, rDS(ON) = 0.024Ω
• Temperature Compensating PSPICE® and SABER™
Models
- Available on the web at: www.fairchildsemi.com
• Thermal Impedance PSPICE and SABER Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
HUFA75329G3, HUFA75329P3, HUFA75329S3S Rev. A
1 page  
HUFA75329G3, HUFA75329P3, HUFA75329S3S
Typical Performance Curves (Continued)
2.5
80µs PULSE TEST
VGS = 10V, ID = 49A
2.0
1.2
1.0
VGS = VDS, ID = 250µA
1.5 0.8
1.0 0.6
0.5
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0.4
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.2
ID = 250µA
1.1
1.0
0.9
0.8
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
1800
1500
1200
900
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
600
300
0
0
COSS
CRSS
10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
8
6
4 WAVEFORMS IN
DESCENDING ORDER:
ID = 49A
2 ID = 36.75A
VDD = 30V
ID = 24.5A
ID = 12.25A
0
0 5 10 15 20 25 30 35
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
©2002 Fairchild Semiconductor Corporation
HUFA75329G3, HUFA75329P3, HUFA75329S3S Rev. A
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HUFA75329G3.PDF ] | |
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