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HUFA75321P3のメーカーはFairchild Semiconductorです、この部品の機能は「35A/ 55V/ 0.034 Ohm/ N-Channel UltraFET Power MOSFETs」です。 |
部品番号 | HUFA75321P3 |
| |
部品説明 | 35A/ 55V/ 0.034 Ohm/ N-Channel UltraFET Power MOSFETs | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとHUFA75321P3ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
Data Sheet
HUFA75321P3, HUFA75321S3S
December 2001
35A, 55V, 0.034 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75321.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75321P3
TO-220AB
75321P
HUFA75321S3S
TO-263AB
75321S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75321S3ST.
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• 35A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- Thermal Impedance SPICE and SABER Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75321P3, HUFA75321S3S Rev. B
1 Page HUFA75321P3, HUFA75321S3S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = 35A
ISD = 35A, dISD/dt = 100A/µs
ISD = 35A, dISD/dt = 100A/µs
Typical Performance Curves
MIN TYP MAX UNITS
- 680 -
- 270 -
- 60 -
pF
pF
pF
MIN TYP MAX UNITS
- - 1.25 V
- - 59 ns
- - 82 nC
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
40
30
20
10
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1 0.2
0.1
0.05
0.02
0.01
0.1
0.0110-5
SINGLE PULSE
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100 101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2001 Fairchild Semiconductor Corporation
HUFA75321P3, HUFA75321S3S Rev. B
3Pages HUFA75321P3, HUFA75321S3S
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VGS
IG(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 16. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 2V
0 Qg(TH)
Qgs
Ig(REF)
0
Qg(10)
Qgd
VGS = 10V
VGS = 20V
FIGURE 17. GATE CHARGE WAVEFORM
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
FIGURE 18. SWITCHING TIME TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
HUFA75321P3, HUFA75321S3S Rev. B
6 Page | |||
ページ | 合計 : 10 ページ | ||
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部品番号 | 部品説明 | メーカ |
HUFA75321P3 | 35A/ 55V/ 0.034 Ohm/ N-Channel UltraFET Power MOSFETs | Fairchild Semiconductor |