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HUFA75307D3 の電気的特性と機能

HUFA75307D3のメーカーはFairchild Semiconductorです、この部品の機能は「15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 HUFA75307D3
部品説明 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HUFA75307D3 Datasheet, HUFA75307D3 PDF,ピン配置, 機能
HUFA75307P3, HUFA75307D3, HUFA75307D3S
Data Sheet
December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75307.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75307P3
TO-220AB
75307P
HUFA75307D3
TO-251AA
75307D
HUFA75307D3S
TO-252AA
75307D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUFA75307D3ST.
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• 15A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75307P3, HUFA75307D3, HUFA75307D3S Rev. B

1 Page





HUFA75307D3 pdf, ピン配列
HUFA75307P3, HUFA75307D3, HUFA75307D3S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
MIN TYP MAX UNITS
- 250 -
- 100 -
- 25 -
pF
pF
pF
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = 15A
ISD = 15A, dISD/dt = 100A/µs
ISD = 15A, dISD/dt = 100A/µs
Typical Performance Curves
MIN TYP MAX UNITS
- - 1.25 V
- - 45 ns
- - 55 nC
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
15
10
5
0
25
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
10-5
SINGLE PULSE
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
101
©2001 Fairchild Semiconductor Corporation
HUFA75307P3, HUFA75307D3, HUFA75307D3S Rev. B


3Pages


HUFA75307D3 電子部品, 半導体
HUFA75307P3, HUFA75307D3, HUFA75307D3S
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VGS
IG(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 16. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 2V
0 Qg(TH)
Qgs
Ig(REF)
0
Qg(10)
Qgd
VGS = 10V
VGS = 20V
FIGURE 17. GATE CHARGE WAVEFORM
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
FIGURE 18. SWITCHING TIME TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
HUFA75307P3, HUFA75307D3, HUFA75307D3S Rev. B

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
HUFA75307D3

15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs

Fairchild Semiconductor
Fairchild Semiconductor
HUFA75307D3S

15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs

Fairchild Semiconductor
Fairchild Semiconductor


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