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HUF76645S3S の電気的特性と機能

HUF76645S3SのメーカーはIntersil Corporationです、この部品の機能は「75A/ 100V/ 0.015 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HUF76645S3S
部品説明 75A/ 100V/ 0.015 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HUF76645S3S Datasheet, HUF76645S3S PDF,ピン配置, 機能
Data Sheet
HUF76645P3, HUF76645S3S
August 1999 File Number 4716.2
75A, 100V, 0.015 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUF76645P3
GATE
SOURCE
HUF76645S3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.014Ω, VGS = 10V
- rDS(ON) = 0.015Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER©
Electrical Models
- Spice and SABER© Thermal Impedance Models
- www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76645P3
TO-220AB
76645P
HUF76645S3S
TO-263AB
76645S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76645S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUF76645P3,
HUF76645S3S
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (TC= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous
Continuous
Continuous
(TC=
(TC=
(TC=
211500o00CooCC, V,, VVGGGSSS===1054VV.5))V().F.(igF.ui.gr.ue.r2e. ).2..)
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ID
ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
100
100
±16
75
75
63
62
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
310
2.07
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300 oC
260 oC
NOTES:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1 CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy Inc.http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 Page





HUF76645S3S pdf, ピン配列
HUF76645P3, HUF76645S3S
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
80
VGS = 10V
60
VGS = 4.5V
40
20
0
25
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
10-5
SINGLE PULSE
10-4
PDM
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
100
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
101
2000
1000
VGS = 10V
VGS = 5V
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
50 IN THIS REGION
10-5
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
FIGURE 4. PEAK CURRENT CAPABILITY
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
100 101
3


3Pages


HUF76645S3S 電子部品, 半導体
HUF76645P3, HUF76645S3S
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 19. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 1V
0 Qg(TH)
Qgs
Ig(REF)
0
Qg(5)
Qgd
VGS = 5V
VGS = 10V
FIGURE 20. GATE CHARGE WAVEFORMS
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
FIGURE 21. SWITCHING TIME TEST CIRCUIT
6
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 22. SWITCHING TIME WAVEFORM

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
HUF76645S3S

75A/ 100V/ 0.015 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
HUF76645S3S

75A/ 100V/ 0.015 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

Intersil Corporation
Intersil Corporation


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