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PDF HUF76629D3S Data sheet ( Hoja de datos )
| Número de pieza | HUF76629D3S | |
| Descripción | 20A/ 100V/ 0.054 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
HUF76629D3, HUF76629D3S
December 2001
20A, 100V, 0.054 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
HUF76629D3
GATE
SOURCE
DRAIN
(FLANGE)
HUF76629D3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.052Ω, VGS = 10V
- rDS(ON) = 0.054Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electriecal Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76629D3
TO-251AA
76629D
HUF76629D3S
TO-252AA
76629D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76629D3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUF76629D3, HUF76629D3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (TC= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous
Continuous
Continuous
(TC=
(TC=
(TC=
112005o00CooCC, ,,VVVGGGSSS===1045.VV5))V().F.(iFg.ui.gr.ue.r2e. ).2..)..
.
.
.
.
.
.
.......
.......
.......
....
....
....
......................
......................
......................
ID
ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
100
100
±16
20
20
20
20
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 150oC.
110
0.74
-55 to 175
300
260
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF76629D3, HUF76629D3S Rev. B
1 page  
HUF76629D3, HUF76629D3S
Typical Performance Curves (Continued)
1.4 1.2
VGS = VDS, ID = 250µA
ID = 250µA
1.2
1.1
1.0
0.8
0.6
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
3000
1000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
COSS ≅ CDS + CGD
100
CRSS = CGD
10
0.1
1.0 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
1.0
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
VDD = 50V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
2 ID = 20A
ID = 10A
0
0 10 20 30 40
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
250
VGS = 4.5V, VDD = 50V, ID = 20A
200
tr
150
100
50
0
0
tf
td(OFF)
td(ON)
10 20 30 40
RGS, GATE TO SOURCE RESISTANCE (Ω)
50
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
300
VGS = 10V, VDD = 50V, ID = 20A
250
200
150
100
50
0
0
td(OFF)
tf
tr
td(ON)
10 20 30 40
RGS, GATE TO SOURCE RESISTANCE (Ω)
50
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HUF76629D3, HUF76629D3S Rev. B
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HUF76629D3S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HUF76629D3 | 20A/ 100V/ 0.054 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET | Fairchild Semiconductor |
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| HUF76629D3S | 20A/ 100V/ 0.054 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET | Fairchild Semiconductor |
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