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HUF76439S3S の電気的特性と機能

HUF76439S3SのメーカーはFairchild Semiconductorです、この部品の機能は「71A/ 60V/ 0.014 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HUF76439S3S
部品説明 71A/ 60V/ 0.014 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HUF76439S3S Datasheet, HUF76439S3S PDF,ピン配置, 機能
Data Sheet
HUF76429D3, HUF76429D3S
December 2001
20A, 60V, 0.027 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
HUF76429D3
GATE
SOURCE
DRAIN
(FLANGE)
HUF76429D3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.023Ω, VGS = 10V
- rDS(ON) = 0.027Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electriecal Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76429D3
TO-251AA
76429D
HUF76429D3S
TO-252AA
76429D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76429D3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUF76429D3, HUF76429D3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
Continuous
(TC=
(TC=
(TC=
122055oo0CCoC,, ,VVVGGGSSS===510V5VV) )).(..F..ig..u..r..e..
..
2)
..
.....................................
.....................................
.....................................
ID
ID
ID
Continuous (TC= 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
60
60
±16
20
20
20
20
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 150oC.
110
0.74
-55 to 175
300
260
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF76429D3, HUF76429D3S Rev. B

1 Page





HUF76439S3S pdf, ピン配列
HUF76429D3, HUF76429D3S
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
25
VGS = 10V
20
15
VGS = 4.5V
10
5
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
10-5
SINGLE PULSE
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
101
600
VGS = 10V
100
VGS = 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10-5
10-4
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
10-3
10-2
t, PULSE WIDTH (s)
10-1
FIGURE 4. PEAK CURRENT CAPABILITY
100
101
©2001 Fairchild Semiconductor Corporation
HUF76429D3, HUF76429D3S Rev. B


3Pages


HUF76439S3S 電子部品, 半導体
HUF76429D3, HUF76429D3S
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 19. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 1V
0 Qg(TH)
Qgs
Ig(REF)
0
Qg(5)
Qgd
VGS = 5V
VGS = 10V
FIGURE 20. GATE CHARGE WAVEFORMS
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
FIGURE 21. SWITCHING TIME TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 22. SWITCHING TIME WAVEFORM
HUF76429D3, HUF76429D3S Rev. A

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
HUF76439S3S

71A/ 60V/ 0.014 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
HUF76439S3S

71A/ 60V/ 0.014 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

Intersil Corporation
Intersil Corporation


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