DataSheet.jp

HUF76409D3 の電気的特性と機能

HUF76409D3のメーカーはFairchild Semiconductorです、この部品の機能は「17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HUF76409D3
部品説明 17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HUF76409D3 Datasheet, HUF76409D3 PDF,ピン配置, 機能
Data Sheet
HUF76409D3, HUF76409D3S
December 2001
17A, 60V, 0.071 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
HUF76409D3
DRAIN
(FLANGE)
GATE
SOURCE
HUF76409D3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.063Ω, VGS = 10V
- rDS(ON) = 0.071Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76409D3
TO-251AA
76409D
HUF76409D3S
TO-252AA
76409D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76409D3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUF76409D3, HUF76409D3SS UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
Continuous
Continuous
(TC
(TC
(TC
(TC
=
=
=
=
1122335555ooCCooCC,, ,,VVVVGGGGSSSS====150V54VV.)5))V(.)F..(i..gF..uig..rue..r..e2..)2.. )...
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ID
ID
ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
60
60
±16
17
18
8
8
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTE:
1. TJ = 25oC to 150oC.
49
0.327
-55 to 175
300
260
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF76409D3, HUF76409D3S Rev. B

1 Page





HUF76409D3 pdf, ピン配列
HUF76409D3, HUF76409D3S
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
15 VGS = 10V
10 VGS = 4.5V
5
0
25
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
10-5
SINGLE PULSE
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
100
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
101
200
100
VGS = 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10-5
10-4
©2001 Fairchild Semiconductor Corporation
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
10-3
10-2
t, PULSE WIDTH (s)
10-1
FIGURE 4. PEAK CURRENT CAPABILITY
100 101
HUF76409D3, HUF76409D3S Rev. B


3Pages


HUF76409D3 電子部品, 半導体
HUF76409D3, HUF76409D3S
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 19. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 1V
0 Qg(TH)
Qgs
Ig(REF)
0
Qg(5)
Qgd
VGS = 5V
VGS = 10V
FIGURE 20. GATE CHARGE WAVEFORMS
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
FIGURE 21. SWITCHING TIME TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 22. SWITCHING TIME WAVEFORM
HUF76409D3, HUF76409D3S Rev. B

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
HUF76409D3

17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
HUF76409D3

17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

Intersil Corporation
Intersil Corporation
HUF76409D3S

17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
HUF76409D3S

17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

Intersil Corporation
Intersil Corporation


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