DataSheet.jp

HUF76407DK8 の電気的特性と機能

HUF76407DK8のメーカーはFairchild Semiconductorです、この部品の機能は「3.5A/ 60V/ 0.105 Ohm/ Dual N-Channel/ Logic Level UltraFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HUF76407DK8
部品説明 3.5A/ 60V/ 0.105 Ohm/ Dual N-Channel/ Logic Level UltraFET Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HUF76407DK8 Datasheet, HUF76407DK8 PDF,ピン配置, 機能
Data Sheet
HUF76407DK8
December 2001
3.5A, 60V, 0.105 Ohm, Dual N-Channel,
Logic Level UltraFET® Power MOSFET
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
Symbol
SOURCE1 (1)
GATE1 (2)
SOURCE2 (3)
GATE2 (4)
5
DRAIN 1 (8)
DRAIN 1 (7)
DRAIN 2 (6)
DRAIN 2 (5)
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.090Ω, VGS = 10V
- rDS(ON) = 0.105Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- SPICE and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Transient Thermal Impedance Curve vs Board Mounting
Area
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76407DK8
MS-012AA
76407DK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76407DK8T.
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
Continuous
(TA
(TA
(TA
=
=
=
122055o0oCCoC,, V,VVGGGSSS===1505VVV) ))(N((FNoiotgetue2re3) )2. )..
.......
(Note 2)
.......
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ID
ID
ID
Continuous (TA = 100oC, VGS = 4.5V) (Figure 2) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 125oC.
2. 50oC/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 1 second.
3. 228oC/W measured using FR-4 board with 0.006 in2 (3.87 mm2) copper pad at 1000 seconds.
HUF76407DK8
60
60
±16
3.5
3.8
1.0
1.0
Figure 4
Figures 6, 17, 18
2.5
20
-55 to 150
300
260
UNITS
V
V
V
A
A
A
A
W
mW/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF76407DK8 Rev. B

1 Page





HUF76407DK8 pdf, ピン配列
Typical Performance Curves
HUF76407DK8
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
4
VGS = 10V, RθJA = 50oC/W
3
2
1
VGS = 4.5V, RθJA = 228oC/W
0
25
50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
150
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
0.1
RθJA = 228oC/W
PDM
0.01
0.001
10-5
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
102
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
103
200
100
VGS = 5V
10
RθJA = 228oC/W
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
150 - TA
125
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUF76407DK8 Rev. B


3Pages


HUF76407DK8 電子部品, 半導体
Test Circuits and Waveforms
HUF76407DK8
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 19. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 1V
0 Qg(TH)
Qgs
Ig(REF)
0
Qg(5)
Qgd
VGS = 5V
VGS = 10V
FIGURE 20. GATE CHARGE WAVEFORMS
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
FIGURE 21. SWITCHING TIME TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 22. SWITCHING TIME WAVEFORM
HUF76407DK8 Rev. B

6 Page



ページ 合計 : 12 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
HUF76407DK8

3.5A/ 60V/ 0.105 Ohm/ Dual N-Channel/ Logic Level UltraFET Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
HUF76407DK8

3.5A/ 60V/ 0.105 Ohm/ Dual N-Channel/ Logic Level UltraFET Power MOSFET

Intersil Corporation
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