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PDF HUF76129P3 Data sheet ( Hoja de datos )
| Número de pieza | HUF76129P3 | |
| Descripción | 56A/ 30V/ 0.016 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HUF76129P3, HUF76129S3S
September 1999
File Number 4395.6
56A, 30V, 0.016 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76129.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76129P3
TO-220AB
76129P
HUF76129S3S
TO-263AB
76129S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF76129S3ST.
Packaging
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Features
• Logic Level Gate Drive
• 56A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.016Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 19999
1 page  
HUF76129P3, HUF76129S3S
Typical Performance Curves (Continued)
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
60
40
-40oC
150oC
25oC
80
VGS = 5V PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 4.5V
60 VGS = 4V
VGS = 10V
40 VGS = 3.5V
20
VDD = 15V
0
012345
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
30
ID = 56A
25
ID = 35A
20
ID = 20A
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20 VGS = 3V
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
5
1.6 PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 56A
1.4
1.2
1.0
10
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.2
VGS = VDS, ID = 250µA
1.1
1.0
0.9
0.8
0.7
0.6
-60
0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
0.8
-60
-0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.15
ID = 250µA
1.10
1.05
1.00
0.95
0.90
-60
0 60 160
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HUF76129P3.PDF ] | |
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