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PDF HUF76121SK8 Data sheet ( Hoja de datos )
| Número de pieza | HUF76121SK8 | |
| Descripción | 8A/ 30V/ 0.023 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HUF76121SK8
April 1999
File Number 4737
8A, 30V, 0.023 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET™ process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76121.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76121SK8
MS-012AA
76121SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76121SK8T.
Features
• Logic Level Gate Drive
• 8A, 30V
• Simulation Models
- Temperature Compensated PSPICE™ and SABER©
Electrical Models
- Spice and SABER© Thermal Impedance Models
- www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Transient Thermal Impedance Curve vs Board Mounting
Area
• Related Literature
- TB370, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
NC (1)
DRAIN(8)
SOURCE(2)
DRAIN(7)
SOURCE(3)
DRAIN(6)
GATE(4)
DRAIN(5)
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE™ is a trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
HUF76121SK8
Typical Performance Curves (Continued)
40
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
30 VDD = 15V
20
10
0
0
150oC
25oC
-55oC
123
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
4
40
VGS = 10V
VGS = 5V
VGS = 4V
30
VGS = 3.5V
20
10
0
0
VGS = 3V
TA = 25oC
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
123
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
FIGURE 8. SATURATION CHARACTERISTICS
40
ID = 8A
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
35
30
ID = 2.3A
25
20
15
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.6
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
1.4
VGS = 10V, ID = 8A
1.2
1.0
0.8
0.6
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2 1.2
VGS = VDS, ID = 250µA
ID = 250µA
1.0 1.1
0.8 1.0
0.6
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
5
0.9
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
5 Page 
SPICE Thermal Model
REV November 1998
HUF76121SK8
Copper Area = 0.04 in2
CTHERM1 th 8 2.0e-3
CTHERM2 8 7 5.0e-3
CTHERM3 7 6 1.0e-2
CTHERM4 6 5 4.0e-2
CTHERM5 5 4 9.0e-2
CTHERM6 4 3 1.2e-1
CTHERM7 3 2 0.5
CTHERM8 2 tl 1.3
RTHERM1 th 8 0.1
RTHERM2 8 7 0.5
RTHERM3 7 6 1.0
RTHERM4 6 5 5.0
RTHERM5 5 4 8.0
RTHERM6 4 3 26
RTHERM7 3 2 39
RTHERM8 2 tl 55
SABER Thermal Model
Copper Area = 0.04 in2
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 8 = 2.0e-3
ctherm.ctherm2 8 7 = 5.0e-3
ctherm.ctherm3 7 6 = 1.0e-2
ctherm.ctherm4 6 5 = 4.0e-2
ctherm.ctherm5 5 4 = 9.0e-2
ctherm.ctherm6 4 3 = 1.2e-1
ctherm.ctherm7 3 2 = 0.5
ctherm.ctherm8 2 tl = 1.3
rtherm.rtherm1 th 8 = 0.1
rtherm.rtherm2 8 7 = 0.5
rtherm.rtherm3 7 6 = 1.0
rtherm.rtherm4 6 5 = 5.0
rtherm.rtherm5 5 4 = 8.0
rtherm.rtherm6 4 3 = 26
rtherm.rtherm7 3 2 = 39
rtherm.rtherm8 2 tl = 55
}
COMPONANT
CTHERM6
CTHERM7
CTHERM8
RTHERM6
RTHERM7
RTHERM8
0.04 in2
1.2e-1
0.5
1.3
26
39
55
HUF76121SK8
th JUNCTION
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
RTHERM7
RTHERM8
8
7
6
5
4
3
2
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
CTHERM7
CTHERM8
tl CASE
TABLE 1. Thermal Models
0.28 in2
0.52 in2
1.5e-1
2.0e-1
1.0 1.0
2.8 3.0
20 15
24 21
38.7 31.3
0.76 in2
2.0e-1
1.0
3.0
13
19
29.7
1.0 in2
2.0e-1
1.0
3.0
12
18
25
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
11
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HUF76121SK8.PDF ] | |
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