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PDF HUF76107D3S Data sheet ( Hoja de datos )
| Número de pieza | HUF76107D3S | |
| Descripción | 20A/ 30V/ 0.052 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HUF76107D3, HUF76107D3S
July 1999
File Number 4701.1
20A, 30V, 0.052 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power
MOSFETs are manufactured using
the innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications
where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay
drivers, low-voltage bus switches, and power management
in portable and battery-operated products.
Formerly developmental type TA76107.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76107D3
TO-251AA
76107D
HUF76107D3S
TO-252AA
76107D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76107D3ST.
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• Logic Level Gate Drive
• 20A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.052Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
58 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
HUF76107D3, HUF76107D3S
Typical Performance Curves Unless otherwise specified (Continued)
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
25 VDD = 15V
20
-55oC
150oC
25oC
15
10
5
0
012345
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
6
30
VGS = 10V
25
20
VGS = 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
VGS = 4.5V
15
10
5
0
0
VGS = 4V
VGS = 3.5V
VGS = 3V
12345
VDS, DRAIN TO SOURCE VOLTAGE (V)
6
FIGURE 8. SATURATION CHARACTERISTICS
90
ID = 20A PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80
70 ID = 12A
60 ID = 5A
50
40
30
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
2.00
1.75
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 20A
1.50
1.25
1.00
0.75
0.50
-60
0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
VGS = VDS, ID = 250µA
1.1
1.0
0.9
0.8
0.7
0.6
-60
0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.15
ID = 250µA
1.10
1.05
1.00
0.95
0.90
-60
0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
62
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HUF76107D3S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HUF76107D3 | 20A/ 30V/ 0.052 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs |  Fairchild Semiconductor |
| HUF76107D3 | 20A/ 30V/ 0.052 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs | Intersil Corporation |
| HUF76107D3S | 20A/ 30V/ 0.052 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs | Fairchild Semiconductor |
| HUF76107D3S | 20A/ 30V/ 0.052 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs | Intersil Corporation |
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