HUF76105DK8 Datasheet PDF - Fairchild Semiconductor
| Part Number | HUF76105DK8 | |
| Description | 5A/ 30V/ 0.050 Ohm/ Dual N-Channel/ Logic Level UltraFET Power MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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Data Sheet
HUF76105DK8
January 2003
5A, 30V, 0.050 Ohm, Dual N-Channel,
Logic Level UltraFET Power MOSFET
This N-Channel power MOSFET is
® manufactured using the innovative
UltraFET™ process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery
operated products.
Formerly developmental type TA76105.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76105DK8
MS-012AA
76105DK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76105DK8T.
Features
• Logic Level Gate Drive
• 5A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.050Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
S1(1)
G1(2)
D1(8)
D1(7)
S2(3)
G2(4)
D2(6)
D2(5)
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
©2003 Fairchild Semiconductor Corporation
HUF76105DK8 Rev. B1
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HUF76105DK8
Typical Performance Curves (Continued)
25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
20
15
-55oC
25oC
150oC
10
5
0
01234
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
5
25
VGS = 10V
VGS = 5V
20
VGS = 4V
15
VGS = 3.5V
10
VGS = 3V
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0 TA = 25oC
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
110
ID = 5A
90
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
70
ID = 1.4A
50
30
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.8 PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.6 VGS = 10V, ID = 5A
1.4
1.2
1.0
0.8
0.6
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
VGS = VDS, ID = 250µA
1.1
1.0
0.9
0.8
0.7
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2003 Fairchild Semiconductor Corporation
1.15
1.1
ID = 250µA
1.05
1.0
0.95
0.9
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
HUF76105DK8 Rev. B1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HUF76105DK8 electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ HUF76105DK8.PDF Datasheet ] | |
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