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HUF75842S3S の電気的特性と機能

HUF75842S3SのメーカーはIntersil Corporationです、この部品の機能は「43A/ 150V/ 0.042 Ohm/ N-Channel/ UltraFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HUF75842S3S
部品説明 43A/ 150V/ 0.042 Ohm/ N-Channel/ UltraFET Power MOSFET
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HUF75842S3S Datasheet, HUF75842S3S PDF,ピン配置, 機能
TM
Data Sheet
HUF76009P3, HUF76009D3S
April 2000 File Number 4861.1
20A, 20V, 0.027 Ohm, N-Channel, Logic
Level Power MOSFETs
THE HUF76009 is an application-specific MOSFET
optimized for switching when used as the upper switch in
synchronous buck applications. The low gate charge and low
input capacitance results in lower driver and lower switching
losses thereby increasing the overall system efficiency.
Symbol
D
G
S
Packaging
HUF76009D3S
JEDEC TODD2AA
DRAIN (FLANGE)
GATE
SOURCE
HUFD76009P3
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
Features
• 20A, 20V
- rDS(ON) = 0.027Ω, VGS = 10V
- rDS(ON) = 0.039Ω, VGS = 5V
• PWM optimized for synchronous buck applications
• Fast Switching
• Low Gate Charge
- Qg Total 11nC (Typ)
• Low Capacitance
- CISS 470pF (Typ)
- CRSS 50pF (Typ)
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76009P3
TO-220AB
76009P
HUF76009D3S
TO-252AA
76009D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the HUF76009D3S in tape and reel, e.g., HUF76009D3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
SYMBOL
PARAMETER
HUF76009P3,
HUF76009D3S
UNITS
VDSS
VDGR
VGS
ID
ID
IDM
PD
Drain to Source Voltage (Note 1)
Drain to Gate Voltage (RGS = 20k) (Note 1)
Gate to Source Voltage
Drain Current
Continuous
Continuous
(TC
(TC
=
=
21500oCoC, V, VGGSS==150VV))
(Figure
2)
Pulsed Drain Current
Power Dissipation
Derate Above 25oC
TJ, TSTG
Operating and Storage Temperature
TL
Tpkg
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
THERMAL SPECIFICATIONS
RθJC
RθJA
Thermal Resistance Junction to Case, TO-220, TO-252
Thermal Resistance Junction to Ambient TO-220
Thermal Resistance Junction to Ambient TO-252
20
20
±16
20
16
Figure 4
41
0.33
-55 to 150
300
260
3.04
62
100
V
V
V
A
A
A
W
W/oC
oC
oC
oC
oC/W
oC/W
oC/W
NOTE:
1. TJ = 25oC to 125oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
UltraFET® is a registered trademark of Intersil Corporation.

1 Page





HUF75842S3S pdf, ピン配列
HUF76009P3, HUF76009D3S
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
25
20
VGS = 10V
15
VGS = 5V
10
5
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
10-5
SINGLE PULSE
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
100
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
101
500
100 VGS = 10V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
150 - TC
125
VGS = 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
3


3Pages


HUF75842S3S 電子部品, 半導体
HUF76009P3, HUF76009D3S
Test Circuits and Waveforms
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 16. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 1V
0 Qg(TH)
Qgs
Ig(REF)
0
Qg(TOT)
Qgd
VGS = 5V
VGS = 10V
FIGURE 17. GATE CHARGE WAVEFORMS
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
FIGURE 18. SWITCHING TIME TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 19. SWITCHING TIME WAVEFORM
6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
HUF75842S3S

43A/ 150V/ 0.042 Ohm/ N-Channel/ UltraFET Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
HUF75842S3S

43A/ 150V/ 0.042 Ohm/ N-Channel/ UltraFET Power MOSFET

Intersil Corporation
Intersil Corporation


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