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HUF75829D3のメーカーはFairchild Semiconductorです、この部品の機能は「18A/ 150V/ 0.110 Ohm/ N-Channel/ UltraFET Power MOSFET」です。 |
部品番号 | HUF75829D3 |
| |
部品説明 | 18A/ 150V/ 0.110 Ohm/ N-Channel/ UltraFET Power MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとHUF75829D3ダウンロード(pdfファイル)リンクがあります。 Total 11 pages
Data Sheet
HUF75831SK8
December 2001
3A, 150V, 0.095 Ohm, N-Channel,
UltraFET® Power MOSFET
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
Symbol
SOURCE (1)
SOURCE (2)
SOURCE (3)
GATE (4)
DRAIN (8)
DRAIN (7)
DRAIN (6)
DRAIN (5)
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.095Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75831SK8
MS-012AA
75831SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75831SK8T.
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
HUF75831SK8
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
(TA=
(TA=
2150o0CoC, V, VGGSS==101V0V) )(F(Figiugruere2)2).
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ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
150
150
±20
3
2
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 125oC.
2. 50oC/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 10 second.
3. 152oC/W measured using FR-4 board with 0.054 in2 (34.8 mm2) copper pad at 1000 seconds
4. 189oC/W measured using FR-4 board with 0.0115 in2 (7.42 mm2) copper pad at 1000 seconds
2.5
20
-55 to 150
300
260
W
mW/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75831SK8 Rev. B
1 Page HUF75831SK8
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
4
VGS = 10V, RθJA = 50oC/W
3
2
1
0
25
50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
150
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
3
DUTY CYCLE - DESCENDING ORDER
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
RθJA = 50oC/W
PDM
0.01
0.001
10-5
10-4
SINGLE PULSE
10-3
10-2
10-1
100
t, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
101 102
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
103
500
100
VGS = 10V
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1
10-5
10-4
RθJA = 50oC/W
10-3
10-2
10-1
t, PULSE WIDTH (s)
100
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
150 - TA
125
101 102 103
HUF75831SK8 Rev. B
3Pages HUF75831SK8
Test Circuits and Waveforms (Continued)
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 16. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 2V
0 Qg(TH)
Qgs
Ig(REF)
0
Qg(10)
Qgd
VGS = 10V
VGS = 20V
FIGURE 17. GATE CHARGE WAVEFORMS
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
FIGURE 18. SWITCHING TIME TEST CIRCUIT
Thermal Resistance vs Mounting Pad Area
The maximum rated junction temperature, TJM, and the
thermal resistance of the heat dissipating path determines the
maximum allowable device power dissipation, PDM, in an
application. Therefore the application’s ambient temperature,
TA (oC), and thermal resistance RθJA (oC/W) must be reviewed
to ensure that TJM is never exceeded. Equation 1
mathematically represents the relationship and serves as the
basis for establishing the rating of the par t.
PDM
=
(---T----J---M-------–----T----A-----)
ZθJA
(EQ. 1)
In using surface mount devices such as the SOP-8 package,
the environment in which it is applied will have a significant
influence on the part’s current and maximum power
©2001 Fairchild Semiconductor Corporation
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 19. SWITCHING TIME WAVEFORM
dissipation ratings. Precise determination of PDM is complex
and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 20
defines the RθJA for the device as a function of the top
HUF75831SK8 Rev. B
6 Page | |||
ページ | 合計 : 11 ページ | ||
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部品番号 | 部品説明 | メーカ |
HUF75829D3 | 18A/ 150V/ 0.110 Ohm/ N-Channel/ UltraFET Power MOSFET | Fairchild Semiconductor |
HUF75829D3 | 18A/ 150V/ 0.110 Ohm/ N-Channel/ UltraFET Power MOSFET | Intersil Corporation |
HUF75829D3S | 18A/ 150V/ 0.110 Ohm/ N-Channel/ UltraFET Power MOSFET | Fairchild Semiconductor |
HUF75829D3S | 18A/ 150V/ 0.110 Ohm/ N-Channel/ UltraFET Power MOSFET | Intersil Corporation |