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HUF75639G3 の電気的特性と機能

HUF75639G3のメーカーはFairchild Semiconductorです、この部品の機能は「56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 HUF75639G3
部品説明 56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFETs
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HUF75639G3 Datasheet, HUF75639G3 PDF,ピン配置, 機能
HUF75639G3, HUF75639P3, HUF75639S3S,
HUF75639S3
Data Sheet
December 2001
56A, 100V, 0.025 Ohm, N-Channel
UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75639.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75639G3
TO-247
75639G
HUF75639P3
TO-220AB
75639P
HUF75639S3S
TO-263AB
75639S
HUF75639S3
TO-262AA
75639S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75639S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
Features
• 56A, 100V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and Saber Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(TAB)
TO-262AA
SOURCE
DRAIN
GATE
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B

1 Page





HUF75639G3 pdf, ピン配列
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = 56A
ISD = 56A, dISD/dt = 100A/µs
ISD = 56A, dISD/dt = 100A/µs
Typical Performance Curves
MIN TYP MAX UNITS
- 2000 -
- 500 -
- 65 -
pF
pF
pF
MIN TYP MAX UNITS
- - 1.25 V
- - 110 ns
- - 320 nC
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
60
50
40
30
20
10
0
25
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
0.01
10-5
10-4
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
101
©2001 Fairchild Semiconductor Corporation
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B


3Pages


HUF75639G3 電子部品, 半導体
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VGS
IG(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 16. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 2V
0 Qg(TH)
Qgs
Ig(REF)
0
Qg(10)
Qgd
VGS = 10V
VGS = 20V
FIGURE 17. GATE CHARGE WAVEFORM
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
FIGURE 18. SWITCHING TIME TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
HUF75639G3

56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFETs

Fairchild Semiconductor
Fairchild Semiconductor
HUF75639G3

56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFETs

Intersil Corporation
Intersil Corporation


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