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HUF75631SK8 の電気的特性と機能

HUF75631SK8のメーカーはIntersil Corporationです、この部品の機能は「5.5A/ 100V/ 0.039 Ohm/ N-Channel/ UltraFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HUF75631SK8
部品説明 5.5A/ 100V/ 0.039 Ohm/ N-Channel/ UltraFET Power MOSFET
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HUF75631SK8 Datasheet, HUF75631SK8 PDF,ピン配置, 機能
Data Sheet
5.5A, 100V, 0.039 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
JEDEC MS-012AA
BRANDING DASH
Symbol
1
2
3
4
SOURCE (1)
SOURCE (2)
SOURCE (3)
GATE (4)
5
DRAIN (8)
DRAIN (7)
DRAIN (6)
DRAIN (5)
HUF75631SK8
October 1999
File Number 4785
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.039Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER©
Electrical Models
- Spice and SABER© Thermal Impedance Models
- www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75631SK8
MS-012AA
75631SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75631SK8T.
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
HUF75631SK8
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (TA= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TA= 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
100
100
±20
5.5
3.5
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 150oC.
2. 50oC/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 10 second.
3. 152oC/W measured using FR-4 board with 0.054 in2 (34.8 mm2) copper pad at 1000 seconds
4. 189oC/W measured using FR-4 board with 0.0115 in2 (7.42 mm2) copper pad at 1000 seconds
2.5
20
-55 to 150
300
260
W
mW/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1 CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE™ is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 Page





HUF75631SK8 pdf, ピン配列
Typical Performance Curves
HUF75631SK8
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
6
VGS = 10V, RθJA = 50oC/W
5
4
3
2
1
0
25
50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
150
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
10
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
1 0.05
0.02
0.01
0.1
RθJA = 50oC/W
PDM
0.01
0.001
10-5
10-4
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
102
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
103
500
100
VGS = 10V
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1
10-5
10-4
RθJA = 50oC/W
10-3
10-2
10-1
t, PULSE WIDTH (s)
100
FIGURE 4. PEAK CURRENT CAPABILITY
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
150 - TA
125
101 102 103
3


3Pages


HUF75631SK8 電子部品, 半導体
HUF75631SK8
Test Circuits and Waveforms (Continued)
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 16. GATE CHARGE TEST CIRCUIT
VDD
VGS
VDS
Qg(TOT)
Qg(10)
VGS = 10V
VGS = 20V
VGS = 2V
0 Qg(TH)
Qgs
Ig(REF)
0
Qgd
FIGURE 17. GATE CHARGE WAVEFORMS
VDS
RL
VGS
RGS
DUT
+
VDD
-
VGS
FIGURE 18. SWITCHING TIME TEST CIRCUIT
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, TJM, and the
thermal resistance of the heat dissipating path determines the
maximum allowable device power dissipation, PDM, in an
application. Therefore the application’s ambient temperature,
TA (oC), and thermal resistance RθJA (oC/W) must be reviewed
to ensure that TJM is never exceeded. Equation 1
mathematically represents the relationship and serves as the
basis for establishing the rating of the part.
PDM = (---T----J--Z-M--θ----J-–---A-T----A-----)
(EQ. 1)
In using surface mount devices such as the SOP-8 package,
the environment in which it is applied will have a significant
influence on the part’s current and maximum power
dissipation ratings. Precise determination of PDM is complex
and influenced by many factors:
6
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
10%
VGS
10%
0
50%
PULSE WIDTH
90%
50%
FIGURE 19. SWITCHING TIME WAVEFORM
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Intersil provides thermal information to assist the designer’s
preliminary application evaluation. Figure 20 defines the
RθJA for the device as a function of the top copper
(component side) area. This is for a horizontally positioned
FR-4 board with 1oz copper after 1000 seconds of steady
state power with no air flow. This graph provides the

6 Page



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共有リンク

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部品番号部品説明メーカ
HUF75631SK8

5.5A/ 100V/ 0.039 Ohm/ N-Channel/ UltraFET Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
HUF75631SK8

5.5A/ 100V/ 0.039 Ohm/ N-Channel/ UltraFET Power MOSFET

Intersil Corporation
Intersil Corporation


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