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HUF75631P3 の電気的特性と機能

HUF75631P3のメーカーはFairchild Semiconductorです、この部品の機能は「33A/ 100V/ 0.040 Ohm/ N-Channel/ UltraFET Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 HUF75631P3
部品説明 33A/ 100V/ 0.040 Ohm/ N-Channel/ UltraFET Power MOSFETs
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HUF75631P3 Datasheet, HUF75631P3 PDF,ピン配置, 機能
Data Sheet
HUF75631P3, HUF75631S3ST
December 2001
33A, 100V, 0.040 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUF75631P3
GATE
SOURCE
HUF75631S3ST
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.040Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75631P3
TO-220AB
75631P
HUF75631S3ST
TO-263AB
75631S
NOTE: When ordering, use the entire part number, e.g.,
HUF75631S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUF75631P3
HUF75631S3ST
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
(TC
(TC
=
=
12050oCoC, V, VGGSS==101V0V) )(F(Figiugruere2)2)
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ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
100
100
±20
33
23
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120
0.80
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
NOTE:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75631P3, HUF75631S3ST Rev. B

1 Page





HUF75631P3 pdf, ピン配列
HUF75631P3, HUF75631S3ST
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
40
30 VGS = 10V
20
10
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
10-5
SINGLE PULSE
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
101
600
100
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
20
10-5
10-4
©2001 Fairchild Semiconductor Corporation
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
10-3
10-2
t, PULSE WIDTH (s)
10-1
FIGURE 4. PEAK CURRENT CAPABILITY
100 101
HUF75631P3, HUF75631S3ST Rev. B


3Pages


HUF75631P3 電子部品, 半導体
HUF75631P3, HUF75631S3ST
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 16. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 2V
0 Qg(TH)
Qgs
Ig(REF)
0
Qg(10)
Qgd
VGS = 10V
VGS = 20V
FIGURE 17. GATE CHARGE WAVEFORMS
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
FIGURE 18. SWITCHING TIME TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 19. SWITCHING TIME WAVEFORM
©2001 Fairchild Semiconductor Corporation
HUF75631P3, HUF75631S3ST Rev. B

6 Page



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共有リンク

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部品番号部品説明メーカ
HUF75631P3

33A/ 100V/ 0.040 Ohm/ N-Channel/ UltraFET Power MOSFETs

Fairchild Semiconductor
Fairchild Semiconductor
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