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HUF75542P3 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HUF75542P3
部品説明 75A/ 80V/ 0.014 Ohm/ N-Channel/ UltraFET Power MOSFETs
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 



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HUF75542P3 Datasheet, HUF75542P3 PDF,ピン配置, 機能
Data Sheet
HUF75542P3, HUF75542S3S
December 2001
75A, 80V, 0.014 Ohm, N-Channel,
UltraFET Power MOSFETs
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
HUF75542P3
GATE
SOURCE
DRAIN
(FLANGE)
HUF75542S3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.014Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75542P3
TO-220AB
75542P
HUF75542S3S
TO-263AB
75542S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75542S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUF75542P3, HUF75542S3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
80
80
±20
75
58
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
230
1.54
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
NOTE:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75542P3, HUF75542S3S Rev. B

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