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HUF75329P3 の電気的特性と機能

HUF75329P3のメーカーはIntersil Corporationです、この部品の機能は「49A/ 55V/ 0.024 Ohm/ N-Channel UltraFET Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 HUF75329P3
部品説明 49A/ 55V/ 0.024 Ohm/ N-Channel UltraFET Power MOSFETs
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HUF75329P3 Datasheet, HUF75329P3 PDF,ピン配置, 機能
HUF75329G3, HUF75329P3, HUF75329S3S
Data Sheet
January 2000 File Number 4361.7
49A, 55V, 0.024 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75329G3
TO-247
75329G
HUF75329P3
TO-220AB
75329P
HUF75329S3S
TO-263AB
75329S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75329S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 49A, 55V
Ultra Low On-Resistance, rDS(ON) = 0.024
• Temperature Compensating PSPICE® and SABER©
Models
- Available on the web at: www.Intersil.com
• Thermal Impedance PSPICE and SABER Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABERis a Copyright of Analogy, Inc. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000.

1 Page





HUF75329P3 pdf, ピン配列
HUF75329G3, HUF75329P3, HUF75329S3S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
TEST CONDITIONS
VSD
trr
QRR
ISD = 49A
ISD = 49A, dISD/dt = 100A/µs
ISD = 49A, dISD/dt = 100A/µs
Typical Performance Curves
MIN TYP MAX UNITS
- 1060 -
- 405 -
- 95 -
pF
pF
pF
MIN TYP MAX UNITS
- - 1.25 V
- - 72 ns
- - 120 nC
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
60
50
40
30
20
10
0
25
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1 0.2
0.1
0.05
0.02
0.01
0.1
0.0110-5
SINGLE PULSE
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100 101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
3


3Pages


HUF75329P3 電子部品, 半導体
HUF75329G3, HUF75329P3, HUF75329S3S
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
tAV
VDS
VDD
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
VGS
IG(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 16. GATE CHARGE TEST CIRCUIT
VGS
VGS
RGS
VDS
RL
DUT
+
VDD
-
FIGURE 18. SWITCHING TIME TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VDD
VDS
Qg(TOT)
VGS
VGS = 2V
0 Qg(TH)
Qgs
Ig(REF)
0
Qg(10)
Qgd
VGS = 10V
VGS = 20V
FIGURE 17. GATE CHARGE WAVEFORM
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
HUF75329P3

49A/ 55V/ 0.024 Ohm/ N-Channel UltraFET Power MOSFETs

Fairchild Semiconductor
Fairchild Semiconductor
HUF75329P3

49A/ 55V/ 0.024 Ohm/ N-Channel UltraFET Power MOSFETs

Intersil Corporation
Intersil Corporation


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