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HUF75329D3のメーカーはIntersil Corporationです、この部品の機能は「20A/ 55V/ 0.026 Ohm/ N-Channel UltraFET Power MOSFETs」です。 |
部品番号 | HUF75329D3 |
| |
部品説明 | 20A/ 55V/ 0.026 Ohm/ N-Channel UltraFET Power MOSFETs | ||
メーカ | Intersil Corporation | ||
ロゴ | |||
このページの下部にプレビューとHUF75329D3ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
Data Sheet
HUF75329D3, HUF75329D3S
June 1999 File Number 4426.4
20A, 55V, 0.026 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75329D3
TO-251AA
75329D
HUF75329D3S
TO-252AA
75329D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF75329D3ST.
Features
• 20A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER©
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at:
www.semi.Intersil.com/families/models.htm
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
76 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 Page HUF75329D3, HUF75329D3S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = 20A
ISD = 20A, dISD/dt = 100A/µs
ISD = 20A, dISD/dt = 100A/µs
Typical Performance Curves
MIN TYP MAX UNITS
- 1060 -
- 405 -
- 95 -
pF
pF
pF
MIN TYP MAX UNITS
- - 1.25 V
- - 68 ns
- - 120 nC
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
25
20
15
10
5
0
25
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1 0.2
0.1
0.05
0.02
0.01
0.1
0.0110-5
SINGLE PULSE
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100 101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
78
3Pages HUF75329D3, HUF75329D3S
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VGS
IG(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 16. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 2V
0 Qg(TH)
Qgs
Ig(REF)
0
Qg(10)
Qgd
VGS = 10V
VGS = 20V
FIGURE 17. GATE CHARGE WAVEFORM
VGS
VGS
RGS
VDS
RL
DUT
+
VDD
-
FIGURE 18. SWITCHING TIME TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
81
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ HUF75329D3 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
HUF75329D3 | 20A/ 55V/ 0.026 Ohm/ N-Channel UltraFET Power MOSFETs | Fairchild Semiconductor |
HUF75329D3 | 20A/ 55V/ 0.026 Ohm/ N-Channel UltraFET Power MOSFETs | Intersil Corporation |
HUF75329D3S | N-Channel UltraFET Power MOSFET | Fairchild Semiconductor |
HUF75329D3S | 20A/ 55V/ 0.026 Ohm/ N-Channel UltraFET Power MOSFETs | Intersil Corporation |