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PDF HUF75321D3S Data sheet ( Hoja de datos )
| Número de pieza | HUF75321D3S | |
| Descripción | 20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HUF75321D3, HUF75321D3S
June 1999 File Number 4351.5
20A, 55V, 0.036 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75321.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75321D3
TO-251AA
75321D
HUF75321D3S
TO-252AA
75321D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-251AA variant in tape and reel, e.g., HUF75321D3ST.
Packaging
JEDEC TO-251AA
Features
• 20A, 55V
• Simulation Models
- Temperature Compensating PSPICE® and SABER©
Models
- Thermal Impedance SPICE and SABER Models
Available on the WEB at:
www.semi.Intersil.com/families/models.htm
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
58 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
HUF75321D3, HUF75321D3S
Typical Performance Curves (Continued)
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 20A
2.0
1.5
1.0
1.2
1.0
0.8
VGS = VDS, ID = 250µA
0.5
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0.6
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.2
ID = 250µA
1.1
1000
800
600
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
1.0
0.9
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
400
COSS
200
CRSS
0
0 10 20 30 40 50 60
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
2 ID = 20A
VDD = 30V
ID = 10A
ID = 5A
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
62
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HUF75321D3S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HUF75321D3 | 20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs |  Fairchild Semiconductor |
| HUF75321D3 | 20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs | Intersil Corporation |
| HUF75321D3S | 20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs | Fairchild Semiconductor |
| HUF75321D3S | 20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs | Intersil Corporation |
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