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HUF75307T3ST の電気的特性と機能

HUF75307T3STのメーカーはFairchild Semiconductorです、この部品の機能は「2.6A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HUF75307T3ST
部品説明 2.6A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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HUF75307T3ST Datasheet, HUF75307T3ST PDF,ピン配置, 機能
Data Sheet
HUF75307T3ST
October 1999 File Number 4364.4
2.6A, 55V, 0.090 Ohm, N-Channel UltraFET
Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET™ process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75307.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75307T3ST SOT-223
5307
NOTE: HUF75307T3ST is available only in tape and reel.
Features
• 2.6A, 55V
• Ultra Low On-Resistance, rDS(ON) = 0.090
• Diode Exhibits Both High Speed and Soft Recovery
• Temperature Compensating PSPICE™ Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
SOT-223
SOURCE
DRAIN
GATE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 Page





HUF75307T3ST pdf, ピン配列
Typical Performance Curves
HUF75307T3ST
1.2
1.0
0.8
0.6
0.4
0.2
0
0 50 100 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
3.0
RθJA = 110oC/W
2.5
2.0
1.5
1.0
0.5
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
10 DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
1 0.02
0.01
RθJA = 110oC/W
0.1
0.01
0.001 10-5
PDM
SINGLE PULSE
10-4
10-3
10-2
10-1
100
t, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
101 102
103
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
TJ = MAX RATED
RTAθJ=A2=5o1C10oC/W
30
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
10
100µs
10
I = I25
150 - TA
125
1ms
1
10ms
RθJA = 110oC/W
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
0.01
VDSS(MAX) = 55V
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
200
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
110-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
102
FIGURE 5. PEAK CURRENT CAPABILITY
103
3


3Pages


HUF75307T3ST 電子部品, 半導体
HUF75307T3ST
Test Circuits and Waveforms (Continued)
VGS
VGS
RGS
VDS
RL
DUT
+
VDD
-
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 18. SWITCHING TIME TEST CIRCUIT
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, TJ(MAX), and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, PD(MAX),
in an application. Therefore the application’s ambient
temperature, TA (oC), and thermal resistance RθJA (oC/W)
must be reviewed to ensure that TJ(MAX) is never exceeded.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
PD(MAX) = (---T----J---(---M--R---A--θ---X-J---A)----–----T----A----)-
(EQ. 1)
In using surface mount devices such as the SOT-223
package, the environment in which it is applied will have a
significant influence on the part’s current and maximum
power dissipation ratings. Precise determination of the
PD(MAX) is complex and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Intersil provides thermal information to assist the designer’s
preliminary application evaluation. Figure 20 defines the
RθJA for the device as a function of the top copper
(component side) area. This is for a horizontally positioned
FR-4 board with 1oz copper after 1000 seconds of steady
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
state power with no air flow. This graph provides the
necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Intersil device Spice
thermal model or manually utilizing the normalized maximum
transient thermal impedance curve.
200
RθJA = 75.9 -19.3 ln(AREA)
150 147oC/W - 0.026in2
128oC/W - 0.068in2
110oC/W - 0.171in2
100
50
0.01
0.1
AREA, TOP COPPER AREA (in2)
1.0
FIGURE 20. THERMAL RESISTANCE vs MOUNTING PAD
AREA
Displayed on the curve are the three RθJA values listed in
the Electrical Specifications table. The three points were
chosen to depict the compromise between the copper board
area, the thermal resistance and ultimately the power
dissipation, PD(MAX). Thermal resistances corresponding to
other component side copper areas can be obtained from
Figure 20 or by calculation using Equation 2. The area, in
square inches is the top copper area including the gate and
source pads.
RθJA = 75.9 19.3 × ln (Area)
(EQ. 2)
6

6 Page



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部品番号部品説明メーカ
HUF75307T3ST

2.6A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
HUF75307T3ST

2.6A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFET

Intersil Corporation
Intersil Corporation


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