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HUF75309D3 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HUF75309D3
部品説明 19A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFETs
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 



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HUF75309D3 Datasheet, HUF75309D3 PDF,ピン配置, 機能
Data Sheet
HUF75307T3ST
December 2001
2.6A, 55V, 0.090 Ohm, N-Channel UltraFET
Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET® process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75307.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75307T3ST SOT-223
5307
NOTE: HUF75307T3ST is available only in tape and reel.
Features
• 2.6A, 55V
• Ultra Low On-Resistance, rDS(ON) = 0.090
• Diode Exhibits Both High Speed and Soft Recovery
• Temperature Compensating PSPICE® Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
SOT-223
GATE
DRAIN
SOURCE
DRAIN
(FLANGE)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75307T3ST Rev. B

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