DataSheet.jp

HUF75229P3 の電気的特性と機能

HUF75229P3のメーカーはFairchild Semiconductorです、この部品の機能は「44A/ 50V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HUF75229P3
部品説明 44A/ 50V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




このページの下部にプレビューとHUF75229P3ダウンロード(pdfファイル)リンクがあります。

Total 9 pages

No Preview Available !

HUF75229P3 Datasheet, HUF75229P3 PDF,ピン配置, 機能
Data Sheet
HUF75229P3
December 2001
44A, 50V, 0.022 Ohm, N-Channel UltraFET
Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET® process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75229P3
TO-220AB
75229P
NOTE: When ordering use the entire part number.
Features
• 44A, 50V
Low On-Resistance, rDS(ON) = 0.022
Temperature Compensating PSPICE® Model
Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75229P3 Rev. B

1 Page





HUF75229P3 pdf, ピン配列
Typical Performance Curves
HUF75229P3
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
50
40
30
20
10
0
25
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1 0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
0.01
10-5
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
200
TJ = MAX RATED
100 TC = 25oC
100µs
10 1ms
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON) BVDSS MAX = 50V
1
1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
200
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
400
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
100
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
40
10-5
10-4
10-3
10-2
10-1
t, PULSE WIDTH (s)
100
FIGURE 5. PEAK CURRENT CAPABILITY
101
HUF75229P3 Rev. B


3Pages


HUF75229P3 電子部品, 半導体
HUF75229P3
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VGS
IG(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 16. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 2V
0
Ig(REF)
0
Qg(10)
Qg(TH)
VGS = 10V
VGS = 20V
FIGURE 17. GATE CHARGE WAVEFORM
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
FIGURE 18. SWITCHING TIME TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HUF75229P3 Rev. B

6 Page



ページ 合計 : 9 ページ
 
PDF
ダウンロード
[ HUF75229P3 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
HUF75229P3

44A/ 50V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
HUF75229P3

44A/ 50V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET

Intersil Corporation
Intersil Corporation


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap