DataSheet.jp

HYB314405BJ-60 の電気的特性と機能

HYB314405BJ-60のメーカーはSiemens Semiconductor Groupです、この部品の機能は「1M x 4-Bit Dynamic RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 HYB314405BJ-60
部品説明 1M x 4-Bit Dynamic RAM
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




このページの下部にプレビューとHYB314405BJ-60ダウンロード(pdfファイル)リンクがあります。
Total 25 pages

No Preview Available !

HYB314405BJ-60 Datasheet, HYB314405BJ-60 PDF,ピン配置, 機能
1M x 4-Bit Dynamic RAM
(Hyper Page Mode (EDO) version)
HYB 314405BJ/BJL-50/-60/-70
Advanced Information
1 048 576 words by 4-bit organization
0 to 70 ˚C operating temperature
Hyper Page Mode - EDO
Performance:
tRAC RAS access time
tCAC CAS access time
tAA Access time from address
tRC Read/Write cycle time
tHPC Hyper page mode (EDO)
cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
89 104 124 ns
20 25 30 ns
Single + 3.3 V (± 0.3 V) supply
Low power dissipation
max. 252 mW active (-50 version)
max. 216 mW active (-60 version)
max. 198 mW active (-70 version)
Standby power dissipation:
7.2 mW max. standby (LVTTL)
3.6 mW max. standby (LVCMOS)
720 µW max. standby (LVCMOS) for Low Power Version
Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
All inputs and outputs LVTTL compatible
1024 refresh cycles / 16 ms
1024 refresh cycles / 128 ms for Low Power Version
Plastic Packages: P-SOJ-26/20-5 with 300 mil width
Semiconductor Group
1
4.96

1 Page





HYB314405BJ-60 pdf, ピン配列
Pin Configuration
(top view)
HYB 314405BJ/BJL-50/-60/-70
3.3V 1M x 4 EDO - DRAM
P-SOJ-26/20-5
Pin Names
A0-A9
RAS
CAS
WE
OE
I/O1 - I/O4
VCC
VSS
N.C.
Address Input
Row Address Strobe
Column Address Strobe
Read/Write Input
Output Enable
Data Input/Output
Power Supply (+ 3.3 V)
Ground (0 V)
No Connection
Semiconductor Group
3


3Pages


HYB314405BJ-60 電子部品, 半導体
HYB 314405BJ/BJL-50/-60/-70
3.3V 1M x 4 EDO - DRAM
DC Characteristics (cont’d)
TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, tT = 2 ns
Parameter
Symbol
Limit Values
min.
max.
Standby VCC supply current
(RAS = CAS = WE = VCC – 0.2 V)
Average VCC supply current during
CAS before RAS refresh mode
-50 version
-60 version
-70 version
ICC5
ICC6
1
200
70
60
55
For Low Power Version only:
Battery backup current (average power supply
current in battery backup mode):
(CAS = CAS before RAS cycling or 0.2 V,
WE = VCC – 0.2 V or 0.2 V,
A0 to A10 = VCC – 0.2 V or 0.2 V;
DI = VCC – 0.2 V or 0.2 V or open,
tRC = 125 µs, tRAS = tRAS min = 1 µs)
ICC7
250
Unit Test
Condition
mA 1)
µA L-version
mA 2)4)
µA –
AC Characteristics 5)6)
TA = 0 to 70 ˚C, VCC = 3.3 V ± 0.3 V, tT = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50 -60 -70
min. max. min. max. min. max.
Common Parameters
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay
time
tRC
tRP
tRAS
tCAS
tASR
tRAH
tASC
tCAH
tRCD
tRAD
89 –
104 –
124 –
ns
35 –
40 –
50 –
ns
50 10 k 60 10 k 70 10 k ns
8 10 k 10 10 k 12 10 k ns
0 – 0 – 0 – ns
8 – 10 – 10 – ns
0 – 0 – 0 – ns
8 – 10 – 12 – ns
12 37 14 45 14 53 ns
10 25 12 30 12 35 ns
Semiconductor Group
6

6 Page



ページ 合計 : 25 ページ
 
PDF
ダウンロード
[ HYB314405BJ-60 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
HYB314405BJ-60

1M x 4-Bit Dynamic RAM

Siemens Semiconductor Group
Siemens Semiconductor Group


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap