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HYB314171BJ-50-のメーカーはSiemens Semiconductor Groupです、この部品の機能は「3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh」です。 |
部品番号 | HYB314171BJ-50- |
| |
部品説明 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh | ||
メーカ | Siemens Semiconductor Group | ||
ロゴ | |||
このページの下部にプレビューとHYB314171BJ-50-ダウンロード(pdfファイル)リンクがあります。 Total 24 pages
3.3V 256 K x 16-Bit Dynamic RAM
3.3V Low Power 256 K x 16-Bit
Dynamic RAM with Self Refresh
HYB 314171BJ-50/-60/-70
HYB 314171BJL-50/-60/-70
Preliminary Information
• 262 144 words by 16-bit organization
• 0 to 70 °C operating temperature
• Fast access and cycle time
• RAS access time:
50 ns (-50 version)
60 ns (-60 version)
70 ns (-70 version)
• CAS access time:
15ns (-50,-60 version)
20 ns (-70 version)
• Cycle time:
95 ns (-50 version)
110 ns (-60 version)
130 ns (-70 version)
• Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
45 ns (-70 version)
• Single + 3.3 V (± 0.3 V) supply with a built-
in VBB generator
• Low Power dissipation
max. 450 mW active (-50 version)
max. 378 mW active (-60 version)
max. 306 mW active (-70 version)
• Standby power dissipation
7.2 mW standby (TTL)
3.6 mW max. standby (CMOS)
0.72 mW max. standby (CMOS) for
Low Power Version
• Output unlatched at cycle end allows two-
dimensional chip selection
• Read, write, read-modify write, CAS-
before-RAS refresh, RAS-only refresh,
hidden-refresh and fast page mode
capability
• 2 CAS / 1 WE control
• Self Refresh (L-Version)
• All inputs and outputs TTL-compatible
• 512 refresh cycles / 16 ms
• 512 refresh cycles / 128 ms
Low Power Version only
• Plastic Packages:
P-SOJ-40-1 400mil width
The HYB 314171BJ/BJL is a 4 MBit dynamic RAM organized as 262 144 words by 16-bit. The
HYB 314171BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 314171BJ/BJL to be packed in a standard plastic 400mil wide P-SOJ-40-1 package.
This package size provides high system bit densities and is compatible with commonly used
automatic testing and insertion equipment. System oriented features include Self Refresh (L-
Version), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic
device families.
Semiconductor Group
1
7.96
1 Page Pin Configuration
(top view)
HYB 314171BJ/BJL-50/-60/-70
3.3V 256 K x 16-DRAM
P-SOJ-40-1
Semiconductor Group
3
3Pages HYB 314171BJ/BJL-50/-60/-70
3.3V 256 K x 16-DRAM
DC Characteristics (cont’d)
Parameter
Average VCC supply current during
fast page mode operation: -50 version
-60 version
-70 version
Symbol Limit Values
min.
max.
ICC4
–
70
65
60
Unit Notes
2, 3, 4
mA
Standby VCC supply current
(RAS = LCAS = UCAS = WE = VCC – 0.2 V)
Average VCC supply current during
CAS-before-RAS refresh mode:
-50 version
-60 version
-70 version
ICC5
ICC6
–
–
1 mA 1
2, 4
125 mA
105
85
Standby VCC current (L-version)
(RAS = LCAS = UCAS = WE= VCC – 0.2 V)
Self Refresh Current (L-version)
(RAS, LCAS, UCAS = 0.2 V
A0 – A8 = VCC – 0.2 V or 0.2 V)
ICC5
ICCS
–
–
200 µA
250 µA
Capacitance
TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Input capacitance (A0 to A8)
Input capacitance (RAS, UCAS, LCAS, WE, OE)
Output capacitance (l/O1 to l/O16)
Symbol
CI1
CI2
CIO
Limit Values
min.
max.
–6
–7
–7
Unit
pF
pF
pF
Semiconductor Group
6
6 Page | |||
ページ | 合計 : 24 ページ | ||
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PDF ダウンロード | [ HYB314171BJ-50- データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
HYB314171BJ-50 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh | Siemens Semiconductor Group |
HYB314171BJ-50- | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh | Siemens Semiconductor Group |