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HYB314171BJ-50- の電気的特性と機能

HYB314171BJ-50-のメーカーはSiemens Semiconductor Groupです、この部品の機能は「3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh」です。


製品の詳細 ( Datasheet PDF )

部品番号 HYB314171BJ-50-
部品説明 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




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HYB314171BJ-50- Datasheet, HYB314171BJ-50- PDF,ピン配置, 機能
3.3V 256 K x 16-Bit Dynamic RAM
3.3V Low Power 256 K x 16-Bit
Dynamic RAM with Self Refresh
HYB 314171BJ-50/-60/-70
HYB 314171BJL-50/-60/-70
Preliminary Information
262 144 words by 16-bit organization
0 to 70 °C operating temperature
Fast access and cycle time
RAS access time:
50 ns (-50 version)
60 ns (-60 version)
70 ns (-70 version)
CAS access time:
15ns (-50,-60 version)
20 ns (-70 version)
Cycle time:
95 ns (-50 version)
110 ns (-60 version)
130 ns (-70 version)
Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
45 ns (-70 version)
Single + 3.3 V (± 0.3 V) supply with a built-
in VBB generator
Low Power dissipation
max. 450 mW active (-50 version)
max. 378 mW active (-60 version)
max. 306 mW active (-70 version)
Standby power dissipation
7.2 mW standby (TTL)
3.6 mW max. standby (CMOS)
0.72 mW max. standby (CMOS) for
Low Power Version
Output unlatched at cycle end allows two-
dimensional chip selection
Read, write, read-modify write, CAS-
before-RAS refresh, RAS-only refresh,
hidden-refresh and fast page mode
capability
2 CAS / 1 WE control
Self Refresh (L-Version)
All inputs and outputs TTL-compatible
512 refresh cycles / 16 ms
512 refresh cycles / 128 ms
Low Power Version only
Plastic Packages:
P-SOJ-40-1 400mil width
The HYB 314171BJ/BJL is a 4 MBit dynamic RAM organized as 262 144 words by 16-bit. The
HYB 314171BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 314171BJ/BJL to be packed in a standard plastic 400mil wide P-SOJ-40-1 package.
This package size provides high system bit densities and is compatible with commonly used
automatic testing and insertion equipment. System oriented features include Self Refresh (L-
Version), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic
device families.
Semiconductor Group
1
7.96

1 Page





HYB314171BJ-50- pdf, ピン配列
Pin Configuration
(top view)
HYB 314171BJ/BJL-50/-60/-70
3.3V 256 K x 16-DRAM
P-SOJ-40-1
Semiconductor Group
3


3Pages


HYB314171BJ-50- 電子部品, 半導体
HYB 314171BJ/BJL-50/-60/-70
3.3V 256 K x 16-DRAM
DC Characteristics (cont’d)
Parameter
Average VCC supply current during
fast page mode operation: -50 version
-60 version
-70 version
Symbol Limit Values
min.
max.
ICC4
70
65
60
Unit Notes
2, 3, 4
mA
Standby VCC supply current
(RAS = LCAS = UCAS = WE = VCC – 0.2 V)
Average VCC supply current during
CAS-before-RAS refresh mode:
-50 version
-60 version
-70 version
ICC5
ICC6
1 mA 1
2, 4
125 mA
105
85
Standby VCC current (L-version)
(RAS = LCAS = UCAS = WE= VCC – 0.2 V)
Self Refresh Current (L-version)
(RAS, LCAS, UCAS = 0.2 V
A0 – A8 = VCC – 0.2 V or 0.2 V)
ICC5
ICCS
200 µA
250 µA
Capacitance
TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Input capacitance (A0 to A8)
Input capacitance (RAS, UCAS, LCAS, WE, OE)
Output capacitance (l/O1 to l/O16)
Symbol
CI1
CI2
CIO
Limit Values
min.
max.
–6
–7
–7
Unit
pF
pF
pF
Semiconductor Group
6

6 Page



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部品番号部品説明メーカ
HYB314171BJ-50

3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh

Siemens Semiconductor Group
Siemens Semiconductor Group
HYB314171BJ-50-

3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh

Siemens Semiconductor Group
Siemens Semiconductor Group


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