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HYB3118165BST-50 の電気的特性と機能

HYB3118165BST-50のメーカーはSiemens Semiconductor Groupです、この部品の機能は「1M x 16-Bit Dynamic RAM 1k Refresh」です。


製品の詳細 ( Datasheet PDF )

部品番号 HYB3118165BST-50
部品説明 1M x 16-Bit Dynamic RAM 1k Refresh
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




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HYB3118165BST-50 Datasheet, HYB3118165BST-50 PDF,ピン配置, 機能
1M × 16-Bit Dynamic RAM
1k Refresh
(Hyper Page Mode-EDO)
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
Advanced Information
• 1 048 576 words by 16-bit organization
• 0 to 70 °C operating temperature
• Hyper Page Mode-EDO-operation
• Performance:
tRAC RAS access time
tCAC CAS access time
tAA Access time from address
tRC Read/Write cycle time
tHPC Hyper page mode (EDO) cycle time
-50 -60
50 60 ns
13 15 ns
25 30 ns
84 104 ns
20 25 ns
• Power Dissipation, Refresh & Addressing:
Power Supply
Addressing
Refresh
Active
TTL Standby
CMOS Standby
HYB5118165 HYB3118165
-50 -60 -50 -60
5 V ± 10 %
3.3 V ± 0.3 V
10/10
10/10
1024 cycles / 16 ms
715 632 468 414
11 7.2
5.5 3.6
mW
mW
mW
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh
• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
• Plastic Package: P-SOJ-42-1
400 mil
P-TSOPII-50/44-1 400 mil
Semiconductor Group
1
1998-10-01

1 Page





HYB3118165BST-50 pdf, ピン配列
Pin Names and Configuration
Row Address Inputs
Column Address Inputs
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Output Enable
Data Input/Output
Read/Write Input
Power Supply
Ground (0 V)
Not Connected
HYB 5(3)118165
A0 - A9
A0 - A9
RAS
UCAS
LCAS
OE
I/O1 - I/O16
WE
VCC
VSS
N.C.
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
1M × 16 EDO-DRAM
P-SOJ-42-1 (400 mil)
V CC 1
I/O1 2
I/O2 3
I/O3 4
I/O4 5
V CC 6
I/O5 7
I/O6 8
I/O7 9
I/O8 10
N.C. 11
N.C. 12
WE 13
RAS 14
N.C. 15
N.C. 16
A0 17
A1 18
A2 19
A3 20
V CC 21
42 V SS
41 I/O16
40 I/O15
39 I/O14
38 I/O13
37 V SS
36 I/O12
35 I/O11
34 I/O10
33 I/O9
32 N.C.
31 LCAS
30 UCAS
29 OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 V SS
SPP02812
P-TSOPII-50/44-1 (400 mil)
VCC 1
I/O1 2
I/O2 3
I/O3 4
I/O4 5
VCC 6
I/O5 7
I/O6 8
I/O7 9
I/O8 10
N.C. 11
50 VSS
49 I/O16
48 I/O15
47 I/O14
46 I/O13
45 VSS
44 I/O12
43 I/O11
42 I/O10
41 I/O9
40 N.C.
N.C.
N.C.
WE
RAS
A11 / N.C.
A10 / N.C.
A0
A1
A2
A3
VCC
15
16
17
18
19
20
21
22
23
24
25
36
35
34
33
32
31
30
29
28
27
26
SPP03457
N.C.
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
VSS
Semiconductor Group
3
1998-10-01


3Pages


HYB3118165BST-50 電子部品, 半導体
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
1M × 16 EDO-DRAM
DC Characteristics (cont’d)
TA = 0 to 70 °C, VSS = 0 V, tT = 2 ns
Parameter
Symbol Limit Values Unit Notes
min. max.
Common Parameters
Input leakage current
(0 V VIH VCC + 0.3 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V VOUT VCC + 0.3 V)
Average VCC supply current
-50 ns version
-60 ns version
(RAS, CAS, address cycling: tRC = tRC MIN.)
Standby VCC supply current (RAS = CAS = VIH)
Average VCC supply current, during RAS-only refresh
cycles
-50 ns version
-60 ns version
(RAS cycling, CAS = VIH, tRC = tRC MIN.)
Average VCC supply current, during hyper page mode
(EDO)
-50 ns version
-60 ns version
(RAS = VIL, CAS, address cycling: tPC = tPC MIN.)
Standby VCC supply current
(RAS = CAS = VCC – 0.2 V)
Average VCC supply current, during CAS-before-RAS
refresh mode
-50 ns version
(RAS, CAS cycling: tRC = tRC MIN.)
-60 ns version
II(L)
IO(L)
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
– 10 10 µA 1
– 10 10 µA 1
– 130 mA 2, 3, 4
– 115 mA 2, 3, 4
– 2 mA –
– 130 mA 2, 4
– 115 mA 2, 4
– 50 mA 2, 3, 4
– 40 mA 2, 3, 4
– 1 mA 1
– 130 mA 2, 4
– 115 mA 2, 4
Semiconductor Group
6
1998-10-01

6 Page



ページ 合計 : 24 ページ
 
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部品番号部品説明メーカ
HYB3118165BST-50

1M x 16-Bit Dynamic RAM 1k Refresh

Siemens Semiconductor Group
Siemens Semiconductor Group


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