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HYB3117400BJ-60 の電気的特性と機能

HYB3117400BJ-60のメーカーはSiemens Semiconductor Groupです、この部品の機能は「3.3V 4M x 4-Bit Dynamic RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 HYB3117400BJ-60
部品説明 3.3V 4M x 4-Bit Dynamic RAM
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




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HYB3117400BJ-60 Datasheet, HYB3117400BJ-60 PDF,ピン配置, 機能
3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BJ/BT(L) -50/-60/-70
HYB3117400BJ/BT(L) -50/-60/-70
Advanced Information
4 194 304 words by 4-bit organization
0 to 70 °C operating temperature
Performance:
tRAC
tCAC
tAA
tRC
tPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
90 110 130 ns
35 40 45 ns
Single + 3.3 V (± 0.3V ) supply
Low power dissipation
max. 396 active mW (HYB3117400BJ/BT-50)
max. 363 active mW (HYB3117400BJ/BT-60)
max. 330 active mW (HYB3117400BJ/BT-70)
max. 360 active mW (HYB3116400BJ/BT-50)
max. 324 active mW (HYB3116400BJ/BT-60)
max. 288 active mW (HYB3116400BJ/BT-70)
7.2 mW standby (LV-TTL)
3.6 mW standby (LV-CMOS)
720 µW standby for L-version
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
Self Refresh and test mode
Fast page mode capability
All inputs, outputs and clocks fully TTL-compatible
2048 refresh cycles / 32 ms for HYB3117400
4096 refresh cycles / 64 ms for HYB3116400
Plastic Package:
P-SOJ-26/24-1 (300 mil)
P-TSOPII-26/24-1 (300mil)
Semiconductor Group
1
1.96

1 Page





HYB3117400BJ-60 pdf, ピン配列
HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Vcc
I/O1
I/O2
WE
RAS
N.C.
1
2
3
4
5
6
26 Vss Vcc 1
25 I/O4 I/O1 2
24 I/O3 I/O2 3
23 CAS WE 4
22 OE RAS 5
21 A9 A11 6
26 Vss
25 I/O4
24 I/O3
23 CAS
22 OE
21 A9
A10
A0
A1
A2
A3
VCC
8
9
10
11
12
13
19
18
17
16
15
14
HYB3117400BJ/BT
A8
A7
A6
A5
A4
Vss
A10
A0
A1
A2
A3
VCC
8
9
10
11
12
13
19
18
17
16
15
14
HYB3116400BJ/BT
A8
A7
A6
A5
A4
Vss
P-SOJ-26/24-1 (300mil)
P-TSOPII-26/24-1 (300mil)
Pin Configuration
Pin Names
A0 to A10
A0 to A11
A0 to A9
RAS
OE
I/O1 -I/O4
CAS
WE
VCC
VSS
N.C.
Row & Column Address Inputs for HYB3117400
Row Address Inputs for HYB3116400
Column Address Inputs for HYB3116400
Row Address Strobe
Output Enable
Data Input/Output
Column Address Strobe
Read/Write Input
Power Supply (+ 3.3 V)
Ground (0 V)
not connected
Semiconductor Group
3


3Pages


HYB3117400BJ-60 電子部品, 半導体
HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 ° C
Input/output voltage ................................................................................-0.5 to min(Vcc+0.5, 4.6) V
Power supply voltage.................................................................................................- 0.5 V to 4.6 V
Power dissipation.................................................................................................................... 0.5 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics (values in brackets for HYB3117400)
TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, tT = 5 ns
Parameter
Symbol Limit Values
min.
max.
Unit Test
Condition
Input high voltage
Input low voltage
TTL Output high voltage (IOUT = – 2 mA)
TTL Output low voltage (IOUT = 2 mA)
VIH 2.0 Vcc+0.5 V 1)
VIL – 0.5 0.8 V 1)
VOH 2.4
V 1)
VOL
0.4 V 1)
CMOS Output high voltage (IOUT = –100 uA) VOH
VCC-0.2 –
V
CMOS Output low voltage (IOUT = 100 uA)
Input leakage current
(0 V VIH Vcc + 0.3V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V VOUT Vcc + 0.3V)
VOL
II(L)
IO(L)
– 10
– 10
0.2
10
10
V
µA 1)
µA 1)
Average VCC supply current:
-50 ns version
-60 ns version
-70 ns version
ICC1
100(120) mA
90 (110) mA
80 (100) mA
2) 3) 4)
2) 3) 4)
2) 3) 4)
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current (RAS = CAS = VIH) ICC2
2
mA –
Semiconductor Group
6

6 Page



ページ 合計 : 26 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
HYB3117400BJ-60

3.3V 4M x 4-Bit Dynamic RAM

Siemens Semiconductor Group
Siemens Semiconductor Group
HYB3117400BJ-60

4M x 4-Bit Dynamic RAM 2k & 4k Refresh

Siemens Semiconductor Group
Siemens Semiconductor Group


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