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HYB3116405BTL-60のメーカーはSiemens Semiconductor Groupです、この部品の機能は「4M x 4-Bit Dynamic RAM 2k & 4k Refresh」です。 |
部品番号 | HYB3116405BTL-60 |
| |
部品説明 | 4M x 4-Bit Dynamic RAM 2k & 4k Refresh | ||
メーカ | Siemens Semiconductor Group | ||
ロゴ | |||
このページの下部にプレビューとHYB3116405BTL-60ダウンロード(pdfファイル)リンクがあります。 Total 26 pages
3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3116405BJ/BT(L) -50/-60/-70
HYB3117405BJ/BT(L) -50/-60/-70
Advanced Information
• 4 194 304 words by 4-bit organization
• 0 to 70 °C operating temperature
• Performance
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Hyper page mode (EDO)
cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
84 104 124 ns
20 25 30 ns
• Single + 3.3 V (± 0.3V ) supply
• Low power dissipation
max. 396 active mW (HYB3117405BJ/BT-50)
max. 363 active mW (HYB3117405BJ/BT-60)
max. 330 active mW (HYB3117405BJ/BT-70)
max. 360 active mW (HYB3116405BJ/BT-50)
max. 324 active mW (HYB3116405BJ/BT-60)
max. 288 active mW (HYB3116405BJ/BT-70)
7.2 mW standby (LV-TTL)
3.6 mW standby (LV-CMOS)
720 µW standby for L-version
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
Self Refresh and test mode
• Hyper page mode (EDO) capability
• All inputs, outputs and clocks fully TTL-compatible
• 2048 refresh cycles / 32 ms for HYB3117405
4096 refresh cycles / 64 ms for HYB3116405
• Plastic Package:
P-SOJ-26/24-1 (300 mil)
P-TSOPII-26/24-1 (300mil)
Semiconductor Group
1
3.96
1 Page HYB 3116(7)405BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Vcc
I/O1
I/O2
WE
RAS
N.C.
1
2
3
4
5
6
26 Vss Vcc 1
25 I/O4 I/O1 2
24 I/O3 I/O2 3
23 CAS WE 4
22 OE RAS 5
21 A9 A11 6
26 Vss
25 I/O4
24 I/O3
23 CAS
22 OE
21 A9
A10
A0
A1
A2
A3
VCC
8
9
10
11
12
13
19
18
17
16
15
14
HYB3117405BJ/BT
A8
A7
A6
A5
A4
Vss
A10
A0
A1
A2
A3
VCC
8
9
10
11
12
13
19
18
17
16
15
14
HYB3116405BJ/BT
A8
A7
A6
A5
A4
Vss
P-SOJ-26/24-1 (300mil)
P-TSOPII-26/24-1 (300mil)
Pin Configuration
Pin Names
A0 to A10
A0 to A11
A0 to A9
RAS
OE
I/O1 -I/O4
CAS
WE
VCC
VSS
N.C.
Row & Column Address Inputs for HYB3117405
Row Address Inputs for HYB3116405
Column Address Inputs for HYB3116405
Row Address Strobe
Output Enable
Data Input/Output
Column Address Strobe
Read/Write Input
Power Supply (+ 3.3 V)
Ground (0 V)
not connected
Semiconductor Group
3
3Pages HYB 3116(7)405BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage ................................................................................-0.5 to min(Vcc+0.5, 4.6) V
Power supply voltage.................................................................................................- 0.5 V to 4.6 V
Power dissipation.................................................................................................................... 0.5 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics (values in brackets for HYB3117405)
TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, tT = 2 ns
Parameter
Symbol Limit Values
min.
max.
Unit Test
Condition
Input high voltage
Input low voltage
TTL Output high voltage (IOUT = – 2 mA)
TTL Output low voltage (IOUT = 2 mA)
VIH 2.0 Vcc+0.5 V 1)
VIL – 0.5 0.8 V 1)
VOH 2.4
–
V 1)
VOL –
0.4 V 1)
CMOS Output high voltage (IOUT = –100 uA) VOH
VCC-0.2 –
V
CMOS Output low voltage (IOUT = 100 uA)
Input leakage current
(0 V ≤ VIH ≤ Vcc + 0.3V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V ≤ VOUT ≤ Vcc + 0.3V)
VOL
II(L)
IO(L)
–
– 10
– 10
0.2
10
10
V
µA 1)
µA 1)
Average VCC supply current:
-50 ns version
-60 ns version
-70 ns version
ICC1
–
–
–
100(120) mA
90 (110) mA
80 (100) mA
2) 3) 4)
2) 3) 4)
2) 3) 4)
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current (RAS = CAS = VIH) ICC2
–
2
mA –
Semiconductor Group
6
6 Page | |||
ページ | 合計 : 26 ページ | ||
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PDF ダウンロード | [ HYB3116405BTL-60 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
HYB3116405BTL-60 | 3.3V 4M x 4-Bit EDO-Dynamic RAM | Siemens Semiconductor Group |
HYB3116405BTL-60 | 4M x 4-Bit Dynamic RAM 2k & 4k Refresh | Siemens Semiconductor Group |