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PDF AM1214-325 Data sheet ( Hoja de datos )
| Número de pieza | AM1214-325 | |
| Descripción | L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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AM1214-325
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 325 W MIN. WITH 6.4 dB GAIN
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
AM1214-325
BRANDING
1214-325
DESCRIPTION
The AM1214-325 device is a high power transistor
specifically designed for L-Band radar pulsed out-
put and driver applications.
This device is designed for operation under moder-
ate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 VSWR at rated
RF conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques
ensure high reliability and product consistency.
The AM1214-325 is supplied in the BIGPAC™ Her-
metic Metal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Pa ra met er
PDISS
Power Dissipation* (TC ≤ 100°C)
IC Device Current*
VCC Collector-Supply Voltage*
TJ Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
Value
1250
25
45
250
− 65 to +200
Unit
W
A
V
°C
°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
0.10 °C/W
September 1992
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| PDF Descargar | [ Datasheet AM1214-325.PDF ] | |
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