AM28F010A Datasheet PDF - Advanced Micro Devices
| Part Number | AM28F010A | |
| Description | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms | |
| Manufacturers | Advanced Micro Devices | |
| Logo |  |
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FINAL
Am28F010A
1 Megabit (128 K x 8-Bit)
CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
DISTINCTIVE CHARACTERISTICS
s High performance
— Access times as fast as 70 ns
s CMOS low power consumption
— 30 mA maximum active current
— 100 µA maximum standby current
— No data retention power consumption
s Compatible with JEDEC-standard byte-wide
32-pin EPROM pinouts
— 32-pin PDIP
— 32-pin PLCC
— 32-pin TSOP
s 100,000 write/erase cycles minimum
s Write and erase voltage 12.0 V ±5%
s Latch-up protected to 100 mA from
–1 V to VCC +1 V
s Embedded Erase Electrical Bulk Chip Erase
— 5 seconds typical chip erase, including
pre-programming
s Embedded Program
— 14 µs typical byte program, including time-out
— 4 seconds typical chip program
s Command register architecture for
microprocessor/microcontroller compatible
write interface
s On-chip address and data latches
s Advanced CMOS flash memory technology
— Low cost single transistor memory cell
s Embedded algorithms for completely self-timed
write/erase operations
GENERAL DESCRIPTION
The Am28F010A is a 1 Megabit Flash memory orga-
nized as 128 Kbytes of 8 bits each. AMD’s Flash memo-
ries offer the most cost-effective and reliable read/write
non-volatile random access memory. The Am28F010A
is packaged in 32-pin PDIP, PLCC, and TSOP versions.
It is designed to be reprogrammed and erased in-system
or in standard EPROM programmers. The Am28F010A
is erased when shipped from the factory.
The standard Am28F010A offers access times of as fast
as 70 ns, allowing high speed microprocessors to
operate without wait states. To eliminate bus contention,
the device has separate chip enable (CE#) and output
enable (OE#) controls.
AMD’s Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
Am28F010A uses a command register to manage this
functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining
maximum EPROM compatibility.
The Am28F010A is compatible with the AMD
Am28F256A, Am28F512A, and Am28F020A Flash
memories. All devices in the Am28Fxxx family follow the
JEDEC 32-pin pinout standard. In addition, all devices
Publication# 16778 Rev: D Amendment/+2
Issue Date: May 1998
within this family that offer Embedded Algorithms use
the same command set. This offers designers the flexi-
bility to retain the same device footprint and command
set, at any density between 256 Kbits and 2 Mbits.
AMD’s Flash technology reliably stores memory con-
tents even after 100,000 erase and program cycles. The
AMD cell is designed to optimize the erase and program-
ming mechanisms. In addition, the combination of
advanced tunnel oxide processing and low internal elec-
tric fields for erase and programming operations pro-
duces reliable cycling. The Am28F010A uses a
12.0±5% VPP input to perform the erase and program-
ming functions.
The highest degree of latch-up protection is achieved
with AMD’s proprietary non-epi process. Latch-up pro-
tection is provided for stresses up to 100 mA on address
and data pins from –1 V to VCC +1 V.
AMD’s Flash technology combines years of EPROM and
EEPROM experience to produce the highest levels of
quality, reliability, and cost effectiveness. The
Am28F010A electrically erases all bits simultaneously
using Fowler-Nordheim tunneling. The bytes are
programmed one byte at a time using the EPROM pro-
gramming mechanism of hot electron injection.
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CONNECTION DIAGRAMS (continued)
A11
A9
A8
A13
A14
NC
WE#
VCC
VPP
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-Pin TSOP—Standard Pinout
OE#
A10
CE#
D7
D6
D5
D4
D3
VSS
D2
D1
D0
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-Pin TSOP—Reverse Pinout
LOGIC SYMBOL
17
A0–A16
DQ0–DQ7
CE# (E#)
OE# (G#)
WE# (W#)
8
32 OE#
31 A10
30 CE#
29 D7
28 D6
27 D5
26 D4
25 D3
24 VSS
23 D2
22 D1
21 D0
20 A0
19 A1
18 A2
17 A3
32 A11
31 A9
30 A8
29 A13
28 A14
27 NC
26 WE#
25 VCC
24 VPP
23 A16
22 A15
21 A12
20 A7
19 A6
18 A5
17 A4
16778D-4
16778D-5
Am28F010A
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AM28F010A electronic component. |
| Information | Total 35 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view |  1. Megabit Flash Memory - AMD [ Learn More ] | |
| Download | [ AM28F010A.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| AM28F010 | The function is 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory. Advanced Micro Devices | |
| AM28F010A | The function is 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms. Advanced Micro Devices | |
| AM28F010A-120EC | The function is 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms. Advanced Micro Devices | |
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