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PDF ASI10610 Data sheet ( Hoja de datos )
| Número de pieza | ASI10610 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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HF75-50F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF75-50F is Designed for
FEATURES:
• PG = 14 dB min. at 75 W/30 MHz
• IMD3 = 50 dBc max. at 75 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 3.25 A
VCBO
110 V
VCEO
55 V
VEBO
PDISS
TJ
T STG
θ JC
4.0 V
127 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
2.0 OC/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
E
A
C
Ø.125 NOM.
FULL R
J
.125
BE
C
D
E
F
GH I
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .785 / 19.94
C .720 / 18.29
D .970 / 24.64
E
F .004 / 0.10
G .085 / 2.16
H .160 / 4.06
I
J .240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10610
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCES
IC = 100 mA
BVCE0
IC = 200 mA
BVEBO
IE = 10 mA
MINIMUM TYPICAL MAXIMUM
110
55
4.0
UNITS
V
V
V
hFE
Cob
GP
IMD3
ηC
VCE = 6.0 V
VCB = 50 V
VCE = 50 V
IC = 1.4 A
f = 1.0 MHz
POUT = 75 W(PEP)
19
14
---
37
--- 50 ---
100 pF
dB
--- -30 dBc
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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| PDF Descargar | [ Datasheet ASI10610.PDF ] | |
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