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1N3766 の電気的特性と機能

1N3766のメーカーはMicrosemi Corporationです、この部品の機能は「High Reliability Silicon Power Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N3766
部品説明 High Reliability Silicon Power Rectifier
メーカ Microsemi Corporation
ロゴ Microsemi Corporation ロゴ 




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1N3766 Datasheet, 1N3766 PDF,ピン配置, 機能
1N1184, 1N1186, 1N1188, 1N1190,
1N3766 and 1N3768 (R)
Available on
commercial
versions
High Reliability Silicon Power Rectifier
Qualified per MIL-PRF-19500/297
DESCRIPTION
This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high
reliability applications. They are constructed with glass passivated die and feature glass to
metal seal construction. They have a 500 amp surge rating and provide a VRWM up to 1000
volts.
Qualified Levels:
JAN, JANTX, and
JANTXV
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
High continuous current rating.
Very low forward voltage.
Low thermal resistance.
JAN, JANTX and JANTXV qualifications are available per MIL-PRF-19500/297.
RoHS compliant devices available (commercial grade only).
APPLICATIONS / BENEFITS
High frequency switching circuits.
Mechanically rugged DO-5 package.
DO-5 (DO-203AB)
Package
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise stated
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
Working Peak Reverse Voltage
1N1184(R)
1N1186(R)
1N1188(R)
1N1190(R)
1N3766(R)
1N3768(R)
Maximum Average DC Output Current @ TC = 150 oC (1)
Non-Repetitive Sinusoidal Surge Current @ 1/120 s,
TC = 150 ºC
Symbol
TJ and TSTG
R ӨJC
V RWM
IO
IFSM
NOTE: 1. Derate linearly 1.4 A ºC between T C = 150 ºC to T C = 175 ºC.
Value
-65 to +175
0.8
100
200
400
600
800
1000
35
500
Unit
oC
oC/W
V
A
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0138, Rev. 2 (121993)
©2013 Microsemi Corporation
Page 1 of 6

1 Page





1N3766 pdf, ピン配列
1N1184, 1N1186, 1N1188, 1N1190,
1N3766 and 1N3768 (R)
ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Forward Voltage
IF = 110 A, TC = 25 °C (1)
Forward Voltage
IF = 500 A, TC = 150 °C (2)
Reverse Current
VRWM = 100 V, TJ = 25 °C
VRWM = 200 V, TJ = 25 °C
VRWM = 400 V, TJ = 25 °C
VRWM = 600 V, TJ = 25 °C
VRWM = 800 V, TJ = 25 °C
VRWM = 1000 V, TJ = 25 °C
Reverse Current
VRWM = 100 V, TJ = 150 °C
VRWM = 200 V, TJ = 150 °C
VRWM = 400 V, TJ = 150 °C
VRWM = 600 V, TJ = 150 °C
VRWM = 800 V, TJj = 150 °C
VRWM = 1000 V, TJ = 150 °C
Symbol
VF
VF
1N1184(R)
1N1186(R)
1N1188(R)
1N1190(R)
1N3766(R)
1N3768(R)
1N1184(R)
1N1186(R)
1N1188(R)
1N1190(R)
1N3766(R)
1N3768(R)
IR
IR
NOT ES:
1. tp < 8.3 ms, duty cycle ≤ 2 percent pulse.
2. VF1 shall be performed with either tp = 800 μs or tp = 8.3 ms.
Min.
Max.
1.4
2.3
Unit
V
V
10 µA
1 mA
T4-LDS-0138, Rev. 2 (121993)
©2013 Microsemi Corporation
Page 3 of 6


3Pages


1N3766 電子部品, 半導体
1N1184, 1N1186, 1N1188, 1N1190,
1N3766 and 1N3768 (R)
PACKAGE DIMENSIONS
Ltr
OAH
CH
HT
SL
HT1
B
CD
HF
J
φT
C
M
Dimensions
Inch
Millimeters
Min Max Min Max
- 1.000 - 25.40
- 0.450 - 11.43
0.115 0.200 2.93 5.08
0.422 0.453 10.72 11.50
0.060
-
1.53
-
0.250 0.375 6.35 9.52
- 0.667 - 16.94
0.667 0.687 16.95 17.44
0.156
-
3.97
-
0.140 0.175 3.56 4.44
- 0.080 -
2.03
0.030
-
0.77
-
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Units must not be damaged by torque of 30 inch-pounds applied to 0.250-28 UNF-28 nut assembled on thread.
4. Diameter of unthreaded portion 0.249 inch (6.32 mm) max and .220 inch (5.59 mm) min.
5. Complete threads to extend to within 2.5 threads of seating plane.
6. Angular orientation of this terminal is undefined.
7. Max pitch diameter of plated threads shall be basic pitch diameter 0.2268 inch (5.76 mm) reference
FED-STD-H28.
8. A chamfer or undercut on one or both ends of the hex portion is optional; minimum base diameter at seating
plane. 0.600 inch (15.24 mm).
9. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0138, Rev. 2 (121993)
©2013 Microsemi Corporation
Page 6 of 6

6 Page



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