DataSheet.jp

1N23WE PDF Data sheet ( 特性 )

部品番号 1N23WE
部品説明 SILICON MIXER DIODE
メーカ Advanced Semiconductor
ロゴ Advanced Semiconductor ロゴ 



Total 1 pages
		

No Preview Available !

1N23WE Datasheet, 1N23WE PDF,ピン配置, 機能
1N23WE
SILICON MIXER DIODE
DESCRIPTION:
The ASI 1N23WE is a Silicon Mixer
Diode Designed for Applications
Operating From 8.0 to 12.4 GHz.
FEATURES:
High burnout resistance
Low noise figure
Hermetically sealed package
MAXIMUM RATINGS
IF 20 mA
VR
PDISS
TJ
TSTG
1.0 V
5.0 (ERGS) @ TC = 25 OC
-55 OC to +150 OC
-55 OC to +150 OC
PACKAGE STYLE DO- 23
NONE
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
NF
F = 9375 MHz
RL = 100
Plo = 1.0 mW
IF = 30 MHz
NFif = 1.5 dB
VSWR
Z
IF
frange
RL = 22
f = 1000 Hz
MINIMUM TYPICAL
335
8.0
MAXIM
7.5
1.3
465
12.4
UNITS
dB
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

1 Page





ページ 合計 : 1 ページ
PDF
ダウンロード
[ 1N23WE.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
1N23WE

SILICON MIXER DIODE

Advanced Semiconductor
Advanced Semiconductor
1N23WE

DIODE

DSI
DSI
1N23WE

Diode

American Microsemiconductor
American Microsemiconductor
1N23WG

SILICON MIXER DIODE

Advanced Semiconductor
Advanced Semiconductor

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap