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1617-35 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 1617-35
部品説明 35 Watts/ 28 Volts/ Pulsed Radar 1540 - 1660 MHz
メーカ ETC
ロゴ ETC ロゴ 



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1617-35 Datasheet, 1617-35 PDF,ピン配置, 機能
R.1.A.990106-HERIC
1617-35
35 Watts, 28 Volts, Pulsed
Radar 1540 - 1660 MHz
ADVANCED ISSUE
GENERAL DESCRIPTION
The 1617-35 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1540 – 1660 MHz. The
transistor includes input and output prematch for broadband performance. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. Low thermal resistance Solder Sealed Package reduces junction
temperature, extends life.
CASE OUTLINE
55AT
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C
290 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
Emitter to Base Voltage (BVebo)
Collector Current (Ic)
50 V
3.0 V
6A
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1660 MHz
Vcc = 28 Volts
PW = Note 1
DF = Note 1
F = 1540 MHz
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo
Emitter to Base Breakdown
BVces
Collector to Emitter Breakdown
hFE DC – Current Gain
θjc2 Thermal Resistance
NOTE 1: 5 µs at 15% Duty
2. At rated pulse conditions
.
Initial Issue May 1999
Ie = 20 mA
Ic = 60 mA
Vce = 5V, Ic = 500mA
MIN TYP MAX UNITS
35
6
7.6
50
10:1
W
W
dB
%
3.0 V
50 V
20
0.6 °C/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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部品番号部品説明メーカ
1617-35

35 Watts/ 28 Volts/ Pulsed Radar 1540 - 1660 MHz

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