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1N4749A PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 1N4749A
部品説明 GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
メーカ TRSYS
ロゴ TRSYS ロゴ 



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1N4749A Datasheet, 1N4749A PDF,ピン配置, 機能
1N4741A THRU 1M200Z
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts Power - 1.0 Watt
FEATURES
l Low profile package
l Built-in strain relief
l Glass passivated junction
l Low inductance
l Typical IR less than 5.0 A above 11V
l High temperature soldering :
260 /10 seconds at terminals
l Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
DO-41
MECHANICAL DATA
Case: Molded plastic, DO-41
Epoxy: UL 94V-O rate flame retardant
Lead: Axial leads, solderable per MIL-STD-202,
method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.012 ounce, 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Peak Pulse Power Dissipation on TA=50 (Note A)
Derate above 50
Peak forward Surge Current 8.3ms single half sine-wave
superimposed on rated load(JEDEC Method) (Note B)
Operating Junction and Storage Temperature Range
SYMBOL
PD
IFSM
TJ,TSTG
VALUE
1.0
6.67
10
-55 to +150
UNITS
Watts
mW/
Amps
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.

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