|
|
|
1N4700 の電気的特性と機能
|
1N4700のメーカーはVishay Telefunkenです、この部品の機能は「Silicon Epitaxial Planar Z-Diodes」です。 このページでは1N4700の詳細な仕様と技術情報(パラメータ、電気的特性、ピン配置など)を見つけることができます. |
製品の詳細 ( Datasheet PDF )
| 部品番号 | 1N4700 |
| |
| 部品説明 | Silicon Epitaxial Planar Z-Diodes | ||
| メーカ | Vishay Telefunken | ||
| ロゴ |  |
||
このページの下部にプレビューと1N4700ダウンロード（pdfファイル）リンクがあります。 Total 6 pages
Silicon Epitaxial Planar Z–Diodes
Features
D Zener voltage specified at 50 mA
D Maximum delta VZ given from 10 mA to 100 mA
D Very high stability
D Low noise
1N4678...1N4717
Vishay Telefunken
Applications
Voltage stabilization
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Power dissipation
Z–current
l=4mm, TL=25°C
Junction temperature
Storage temperature range
Type
Symbol
PV
IZ
Tj
Tstg
Value
500
PV/VZ
175
–65...+175
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, TL=constant
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=100mA
Type
Symbol
RthJA
Value
300
Unit
K/W
Symbol Min Typ Max Unit
VF 1.5 V
Document Number 85586
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
1 Page  
1N4678...1N4717
Vishay Telefunken
1.) Toleranzing and voltage designation (VZ).
The type numbers shown have a standard tolerance of ± 5% on the nominal zener voltage.
2.) Maximum zener current ratings (IZM).
Maximum zener current ratings are based on maximum zener voltage of the individual units.
3.) Reverse leakage current (IR).
4.)
VRMoealvtxaeimgrseuemclheavaonklgataeggeiescecuhqrrauenanglttseoa(tDrheVegZd)ui.faferarennteceedbaentwdemeenaVsZuraetd1a0t0VmAR
as shown
and VZ at
on the
10mA.
table.
Characteristics (Tj = 25_C unless otherwise specified)
600 1.3
VZtn=VZt/VZ(25°C)
500
1.2
TKVZ=10 10–4/K
400
8 10–4/K
6 10–4/K
1.1
300
4 10–4/K
2 10–4/K
1.0 0
200 –2 10–4/K
–4 10–4/K
100 0.9
0
0
95 9602
40 80 120 160 200
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0.8
–60
95 9599
0 60 120 180
Tj – Junction Temperature ( °C )
240
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
1000
15
Tj = 25°C
100
10
IZ=5mA
10
5
IZ=5mA
0
1
0
95 9598
5 10 15 20
VZ – Z-Voltage ( V )
25
Figure 2. Typical Change of Working Voltage
under Operating Conditions at Tamb=25°C
–5
0
95 9600
10 20 30 40
VZ – Z-Voltage ( V )
50
Figure 4. Temperature Coefficient of Vz vs.
Z–Voltage
Document Number 85586
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
3 (6)
3Pages 
1N4678...1N4717
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
6 (6)
Document Number 85586
Rev. 2, 01-Apr-99
6 Page | |||
| ページ | 合計 : 6 ページ | ||
|
|
PDF ダウンロード | [ 1N4700 datasheet.PDF ] | |
部品紹介
|
1N4700 データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 また、1N4700のさまざまなアプリケーション回路とユースケースを使用して独自の設計に統合する方法を理解するのに役立ちます。 |
共有リンク
Link :おすすめデータシート
|
あなたの検索基準に基づいて、興味のある他のデータシートを見つけました。同様の部品も一緒に検討することをお勧めします。 |
| 部品番号 | 部品説明 | メーカ |
| 1N4700 | 500 mW AXIAL-LEADED ZENER DIODES |  Microsemi Corporation |
| 1N4700 | Zener Diode ( Rectifier ) |  General Semiconductor |
| 1N4700 | Silicon Epitaxial Planar Z-Diodes | Vishay Telefunken |
| 1N4700 | LOW LEVEL ZENER DIODES ULTRA-LOW CURRENT: 50 A - LOW LEAKAGE |  Knox SemiconductorInc |