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PDF 1N4454-1 Data sheet ( Hoja de datos )
| Número de pieza | 1N4454-1 | |
| Descripción | COMPUTER DIODE | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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• 1N4454 and IN4454-1 AVAILABLE IN JAN, JANTX, AND JANTXV
PER MIL-PRF-19500/144
• SWITCHING DIODE
• HERMETICALLY SEALED
• METALLURGICALLY BONDED
• DOUBLE PLUG CONSTRUCTION
MAXIMUM RATINGS
Junction Temperature: -55°C to +175°C
Storage Temperature: -55°C to +175°C
Operating Current: 200 mA @ TA = +25°C
Derating Factor: 1.33 mA/°C Above TA = + 25°C
Surge Current A: 1A (pk), Pw = 1 sec
Surge Current B: 4A (pk), Pw = 1 µs
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
VBR
@5µA
Volts
75
V RWM
Volts (pk)
50
Vf 1 Vf 2 t rr
I0 @I F = 10 mA @I F = 10 mA
TA = 150°C
mA
V dc
V dc
n sec
200 1.0
0.7
4
I R1
@ 50 V dc
µA
0.1
I R2
@ 50 V
TA = 150°C
µA
100
CAPACITANCE
@0V
pF
2.0
1N4454
1N4454-1
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed
glass case per MIL-S-19500/144
D0-35 outline
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJL):
250 ˚C/W maximum at L = .375
THERMAL IMPEDANCE: (ZOJX): 70
˚C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com E-mail: [email protected]
1 page | ||
| Páginas | Total 2 Páginas | |
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Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 1N4454-1 | COMPUTER DIODE | Microsemi Corporation |
| 1N4454-1 | SWITCHING DIODE |  Compensated Deuices Incorporated |
| 1N4454-1 | Diode Switching 50V 0.2A 2-Pin DO-35 |  New Jersey Semiconductor |
| 1N4454-1 | Silicon Switching Diode |  MA-COM |
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